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公开(公告)号:US20180374844A1
公开(公告)日:2018-12-27
申请号:US16105518
申请日:2018-08-20
Applicant: ROHM CO., LTD.
Inventor: Kenji NISHIDA , Shinpei OHNISHI , Kentaro NASU
IPC: H01L27/06 , H01L29/866 , H01L29/78 , H01L29/739 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/20 , H01L29/40 , H01L29/16
CPC classification number: H01L27/0635 , H01L27/0629 , H01L29/0615 , H01L29/0623 , H01L29/0646 , H01L29/0649 , H01L29/0692 , H01L29/16 , H01L29/1608 , H01L29/2003 , H01L29/407 , H01L29/423 , H01L29/42368 , H01L29/66106 , H01L29/66712 , H01L29/7397 , H01L29/7808 , H01L29/7813 , H01L29/866
Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.
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公开(公告)号:US20230112583A1
公开(公告)日:2023-04-13
申请号:US18065997
申请日:2022-12-14
Applicant: ROHM CO., LTD.
Inventor: Kentaro NASU , Kenji NISHIDA
IPC: H01L27/088 , H01L23/522 , H01L27/02 , H01L29/78 , H01L29/06 , H01L29/423 , H01L27/06
Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.
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公开(公告)号:US20180096991A1
公开(公告)日:2018-04-05
申请号:US15713015
申请日:2017-09-22
Applicant: ROHM CO., LTD.
Inventor: Kentaro NASU , Kenji NISHIDA
IPC: H01L27/088 , H01L23/522 , H01L29/423 , H01L29/78 , H01L29/06 , H01L27/02
Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.
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公开(公告)号:US20170256536A1
公开(公告)日:2017-09-07
申请号:US15449479
申请日:2017-03-03
Applicant: ROHM CO., LTD.
Inventor: Kenji NISHIDA , Shinpei OHNISHI , Kentaro NASU
IPC: H01L27/06 , H01L29/06 , H01L29/423 , H01L29/866 , H01L29/739
CPC classification number: H01L27/0635 , H01L27/0629 , H01L29/0615 , H01L29/0623 , H01L29/0646 , H01L29/0649 , H01L29/0692 , H01L29/1608 , H01L29/2003 , H01L29/407 , H01L29/423 , H01L29/42368 , H01L29/66106 , H01L29/66712 , H01L29/7397 , H01L29/7808 , H01L29/7813 , H01L29/866
Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.
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公开(公告)号:US20200273858A1
公开(公告)日:2020-08-27
申请号:US16874347
申请日:2020-05-14
Applicant: ROHM CO., LTD.
Inventor: Kentaro NASU , Kenji NISHIDA
IPC: H01L27/088 , H01L23/522 , H01L27/02 , H01L29/78 , H01L29/06 , H01L29/423 , H01L27/06
Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.
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