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1.发明申请METHOD FOR FABRICATING A METAL-INSULATOR-METAL (MIM) CAPACITOR HAVING CAPACITOR DIELECTRIC LAYER FORMED BY ATOMIC LAYER DEPOSITION (ALD) 审中-公开用于制备具有由原子层沉积（ALD）形成的电容器介电层的金属绝缘体金属（MIM）电容器的方法公开(公告)号：US20140327064A1
公开(公告)日：2014-11-06
申请号：US14332687
申请日：2014-07-16
Applicant: Renesas Electronics Corporation
Inventor： Toshihiro IIZUKA , Tomoe YAMAMOTO , Mami TODA , Shintaro YAMAMICHI
IPC: H01L27/108
CPC classification number: H01L27/108 , C23C16/405 , C23C16/45525 , G11C11/404 , G11C2207/104 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L27/10814 , H01L27/10852 , H01L27/10894 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/65 , H01L28/90
Abstract: In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0
Abstract translation: 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0
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