MEMS DEVICE
    1.
    发明申请
    MEMS DEVICE 有权
    MEMS器件

    公开(公告)号:US20090152655A1

    公开(公告)日:2009-06-18

    申请号:US12280669

    申请日:2007-02-23

    IPC分类号: H01L27/00 H01L21/00

    摘要: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11); depositing a first electrode (15) that is operably coupled with the electronic circuit (11); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

    摘要翻译: 在基板(10)上制造微机电系统(MEMS)装置的方法包括以下步骤:处理基板(10)以制造电子电路(11); 沉积与电子电路(11)可操作地耦合的第一电极(15); 沉积膜(16),使得其机械耦合到第一电极(15); 施加牺牲层(50); 沉积与电子电路(11)可操作地耦合的结构层(18)和第二电极(17),使得牺牲层(50)设置在膜(16)和结构层(18)之间,以便 形成初步结构; 分离衬底(10); 以及去除所述牺牲层以形成MEMS结构,其中在去除所述牺牲层(50)的步骤之前执行对所述衬底(10)进行单分割的步骤。

    MEMS device
    2.
    发明授权
    MEMS device 有权
    MEMS器件

    公开(公告)号:US08497149B2

    公开(公告)日:2013-07-30

    申请号:US12280669

    申请日:2007-02-23

    IPC分类号: H01L21/00

    摘要: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11); depositing a first electrode (15) that is operably coupled with the electronic circuit (11); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

    摘要翻译: 在基板(10)上制造微机电系统(MEMS)装置的方法包括以下步骤:处理基板(10)以制造电子电路(11); 沉积与电子电路(11)可操作地耦合的第一电极(15); 沉积膜(16),使得其机械耦合到第一电极(15); 施加牺牲层(50); 沉积与电子电路(11)可操作地耦合的结构层(18)和第二电极(17),使得牺牲层(50)设置在膜(16)和结构层(18)之间,以便 形成初步结构; 分离衬底(10); 以及去除所述牺牲层以形成MEMS结构,其中在去除所述牺牲层(50)的步骤之前执行对所述衬底(10)进行单分割的步骤。

    MEMS PROCESS AND DEVICE
    3.
    发明申请
    MEMS PROCESS AND DEVICE 有权
    MEMS工艺和器件

    公开(公告)号:US20100155864A1

    公开(公告)日:2010-06-24

    申请号:US12719999

    申请日:2010-03-09

    IPC分类号: H01L29/84

    摘要: A MEMS device, for example a capacitive microphone, comprises a flexible membrane 11 that is free to move in response to pressure differences generated by sound waves. A first electrode 13 is mechanically coupled to the flexible membrane 11, and together form a first capacitive plate of the capacitive microphone device. A second electrode 23 is mechanically coupled to a generally rigid structural layer or back-plate 14, which together form a second capacitive plate of the capacitive microphone device. The capacitive microphone is formed on a substrate 1, for example a silicon wafer. A back-volume 33 is provided below the membrane 11, and is formed using a “back-etch” through the substrate 1. A first cavity 9 is located directly below the membrane 11, and is formed using a first sacrificial layer during the fabrication process. Interposed between the first and second electrodes 13 and 23 is a second cavity 17, which is formed using a second sacrificial layer during the fabrication process. A plurality of bleed holes 15 connect the first cavity 9 and the second cavity 17. Acoustic holes 31 are arranged in the back-plate 14 so as to allow free movement of air molecules, such that the sound waves can enter the second cavity 17. The first and second cavities 9 and 17 in association with the back-volume 33 allow the membrane 11 to move in response to the sound waves entering via the acoustic holes 31 in the back-plate 14. The provision of first and second sacrificial layers has the advantage of protecting the membrane during manufacture, and disassociating the back etch process from the definition of the membrane. The bleed holes 15 aid with the removal of the first and second sacrificial layers. The bleed holes 15 also contribute to the operating characteristics of the microphone.

    摘要翻译: MEMS器件,例如电容麦克风,包括响应于由声波产生的压力差而自由移动的柔性膜11。 第一电极13机械耦合到柔性膜11,并且一起形成电容式麦克风装置的第一电容板。 第二电极23机械地耦合到大致刚性的结构层或背板14,它们一起形成电容式麦克风装置的第二电容板。 电容麦克风形成在基板1上,例如硅晶片。 背部体积33设置在膜11下方,并且通过基底1的“背蚀刻”形成。第一腔9位于膜11的正下方,并且在制造期间使用第一牺牲层形成 处理。 介于第一和第二电极13和23之间的是第二腔17,其在制造过程中使用第二牺牲层形成。 多个排放孔15连接第一腔9和第二腔17.声孔31布置在背板14中,以便允许空气分子的自由运动,使得声波可以进入第二腔17。 与背容积33相关联的第一和第二空腔9和17允许膜11响应于通过背板14中的声孔31进入的声波而移动。提供第一和第二牺牲层具有 在制造过程中保护膜的优点,以及使背蚀刻工艺与膜的定义分离。 排出孔15有助于去除第一和第二牺牲层。 排放孔15也有助于麦克风的操作特性。

    MEMS process and device
    4.
    发明授权
    MEMS process and device 有权
    MEMS工艺和器件

    公开(公告)号:US07781249B2

    公开(公告)日:2010-08-24

    申请号:US11723514

    申请日:2007-03-20

    IPC分类号: H01L21/00

    摘要: A MEMS device comprising a flexible membrane that is free to move in response to pressure differences generated by sound waves. A first electrode mechanically coupled to the flexible membrane, and together form a first capacitive plate. A second electrode mechanically coupled to a generally rigid structural layer or back-plate, which together form a second capacitive plate. A back-volume is provided below the membrane. A first cavity located directly below the membrane. Interposed between the first and second electrodes is a second cavity. A plurality of bleed holes connect the first cavity and the second cavity. Acoustic holes are arranged in the back-plate so as to allow free movement of air molecules, such that the sound waves can enter the second cavity. The first and second cavities in association with the back-volume allow the membrane to move in response to the sound waves entering via the acoustic holes in the back-plate.

    摘要翻译: 包括柔性膜的MEMS器件,其可响应于由声波产生的压力差而自由移动。 机械地耦合到柔性膜的第一电极,并且一起形成第一电容板。 机械耦合到大致刚性的结构层或背板的第二电极,它们一起形成第二电容板。 在膜的下方提供背部体积。 位于膜下方的第一腔。 介于第一和第二电极之间的是第二腔。 多个排放孔连接第一腔和第二腔。 声孔布置在背板中,以便允许空气分子的自由运动,使得声波可以进入第二腔。 与背容积相关联的第一和第二空腔允许膜响应于通过背板中的声孔进入的声波而移动。

    MEMS process and device
    5.
    发明授权
    MEMS process and device 有权
    MEMS工艺和器件

    公开(公告)号:US07856804B2

    公开(公告)日:2010-12-28

    申请号:US12719999

    申请日:2010-03-09

    IPC分类号: H01L29/34

    摘要: A MEMS device comprising a flexible membrane that is free to move in response to pressure differences generated by sound waves. A first electrode mechanically coupled to the flexible membrane, and together form a first capacitive plate. A second electrode mechanically coupled to a generally rigid structural layer or back-plate, which together form a second capacitive plate. A back-volume is provided below the membrane. A first cavity located directly below the membrane. Interposed between the first and second electrodes is a second cavity. A plurality of bleed holes connected the first cavity and the second cavity. Acoustic holes are arranged in the back-plate so as to allow free movement of air molecules, such that the sound waves can enter the second cavity. The first and second cavities in association with the back-volume allow the membrane to move in response to the sound waves entering via the acoustic holes in the back-plate.

    摘要翻译: 包括柔性膜的MEMS器件,其可响应于由声波产生的压力差而自由移动。 机械地耦合到柔性膜的第一电极,并且一起形成第一电容板。 机械耦合到大致刚性的结构层或背板的第二电极,它们一起形成第二电容板。 在膜的下方提供背部体积。 位于膜下方的第一腔。 介于第一和第二电极之间的是第二腔。 多个排放孔连接第一腔和第二腔。 声孔布置在背板中,以便允许空气分子的自由移动,使得声波可以进入第二腔。 与背容积相关联的第一和第二空腔允许膜响应于通过背板中的声孔进入的声波而移动。

    Mems process and device
    6.
    发明申请
    Mems process and device 有权
    Mems过程和设备

    公开(公告)号:US20070284682A1

    公开(公告)日:2007-12-13

    申请号:US11723514

    申请日:2007-03-20

    IPC分类号: H01L29/84 H01L21/00 H01L21/31

    摘要: A MEMS device, for example a capacitive microphone, comprises a flexible membrane 11 that is free to move in response to pressure differences generated by sound waves. A first electrode 13 is mechanically coupled to the flexible membrane 11, and together form a first capacitive plate of the capacitive microphone device. A second electrode 23 is mechanically coupled to a generally rigid structural layer or back-plate 14, which together form a second capacitive plate of the capacitive microphone device. The capacitive microphone is formed on a substrate 1, for example a silicon wafer. A back-volume 33 is provided below the membrane 11, and is formed using a “back-etch” through the substrate 1. A first cavity 9 is located directly below the membrane 11, and is formed using a first sacrificial layer during the fabrication process. Interposed between the first and second electrodes 13 and 23 is a second cavity 17, which is formed using a second sacrificial layer during the fabrication process. A plurality of bleed holes 15 connect the first cavity 9 and the second cavity 17. Acoustic holes 31 are arranged in the back-plate 14 so as to allow free movement of air molecules, such that the sound waves can enter the second cavity 17. The first and second cavities 9 and 17 in association with the back-volume 33 allow the membrane 11 to move in response to the sound waves entering via the acoustic holes 31 in the back-plate 14. The provision of first and second sacrificial layers has the advantage of protecting the membrane during manufacture, and disassociating the back etch process from the definition of the membrane. The bleed holes 15 aid with the removal of the first and second sacrificial layers. The bleed holes 15 also contribute to the operating characteristics of the microphone.

    摘要翻译: MEMS器件,例如电容麦克风,包括响应于由声波产生的压力差而自由移动的柔性膜11。 第一电极13机械耦合到柔性膜11,并且一起形成电容式麦克风装置的第一电容板。 第二电极23机械地耦合到大致刚性的结构层或背板14,它们一起形成电容式麦克风装置的第二电容板。 电容麦克风形成在基板1上,例如硅晶片。 背部体积33设置在膜11下方,并且通过基底1的“背蚀刻”形成。第一腔9位于膜11的正下方,并且在制造期间使用第一牺牲层形成 处理。 介于第一和第二电极13和23之间的是第二腔17,其在制造过程中使用第二牺牲层形成。 多个排放孔15连接第一腔9和第二腔17.声孔31布置在背板14中,以便允许空气分子的自由运动,使得声波可以进入第二腔17。 与背容积33相关联的第一和第二空腔9和17允许膜11响应于通过背板14中的声孔31进入的声波而移动。提供第一和第二牺牲层具有 在制造过程中保护膜的优点,以及使背蚀刻工艺与膜的定义分离。 排出孔15有助于去除第一和第二牺牲层。 排放孔15也有助于麦克风的操作特性。