公开(公告)号：US20230356998A1

公开(公告)日：2023-11-09

申请号：US18357784

申请日：2023-07-24

申请人： TDK Corporation ,  TDK Electronics AG

发明人： Pirmin Hermann Otto Rombach ,  Kurt Rasmussen ,  Dennis Mortensen ,  Cheng-Yen Liu ,  Morten Ginnerup ,  Jan Tue Ravnkilde ,  Jotaro Akiyama

IPC分类号： B81B3/00 ,  B81C1/00 ,  H04R1/08

CPC分类号： B81B3/0051 ,  B81C1/00158 ,  H04R1/08 ,  H04R2201/003 ,  B81C2201/056 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C2201/053

摘要： In an embodiment, a method for fabricating a Microelectromechanical System (MEMS) microphone includes depositing, on a frontside of a wafer, a first oxide layer over a silicon nitride thin film and over and adjacent the wafer, wherein the silicon nitride thin film is disposed over the wafer, depositing a membrane protection layer over the first oxide layer between a first side of a first cavity formed in the wafer and a second side of a second cavity formed in the wafer, depositing a second oxide layer over and adjacent the membrane protection layer, depositing a first membrane nitride layer over the second oxide layer, depositing a membrane polysilicon layer over the first membrane nitride layer, depositing a second membrane nitride layer over the membrane polysilicon layer, depositing a third oxide layer over the second membrane nitride layer and depositing a fourth oxide layer over the third oxide layer.

公开(公告)号：US11746001B2

公开(公告)日：2023-09-05

申请号：US17308340

申请日：2021-05-05

申请人： TDK Electronics AG ,  TDK Corporation

发明人： Pirmin Hermann Otto Rombach ,  Kurt Rasmussen ,  Dennis Mortensen ,  Cheng-Yen Liu ,  Morten Ginnerup ,  Jan Tue Ravnkilde ,  Jotaro Akiyama

IPC分类号： B81B3/00 ,  B81C1/00 ,  H04R1/08

CPC分类号： B81B3/0051 ,  B81C1/00158 ,  H04R1/08 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C2201/053 ,  B81C2201/056 ,  H04R2201/003

摘要： A microelectromechanical (MEMS) microphone with membrane trench reinforcements and method of fabrication is provided. The MEMS microphone includes a flexible plate and a rigid plate mechanically coupled to the flexible plate. The MEMS microphone includes a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate. The stoppage member limits motion of the flexible plate. The rigid plate includes a reverse bending edge that include a first lateral etch stop that includes a first corner radius and a second lateral etch stop that includes a second corner radius. The first corner radius is more than 100 nanometers and the second corner radius is more than 25 nanometers. Further, a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

公开(公告)号：US09988265B2

公开(公告)日：2018-06-05

申请号：US15243031

申请日：2016-08-22

申请人： Semiconductor Manufacturing International Corporation

发明人： Emmanuel P. Quevy ,  Louis Nervegna ,  Jeremy R. Hui

IPC分类号： B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  G01N27/22

CPC分类号： B81C1/00246 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/0077 ,  B81B7/008 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2201/0105 ,  B81C2201/056 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0172 ,  B81C2203/019 ,  B81C2203/0735 ,  G01N27/223 ,  G01N27/227

摘要： Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

公开(公告)号：US20160362295A1

公开(公告)日：2016-12-15

申请号：US15246278

申请日：2016-08-24

申请人： Semiconductor Manufacturing International Corporation

发明人： Emmanuel P. Quevy ,  Jeremy R. Hui ,  Carrie Wing-Zin Low ,  Mehrnaz Motiee

IPC分类号： B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00246 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/0077 ,  B81B7/008 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2201/0105 ,  B81C2201/056 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0172 ,  B81C2203/019 ,  B81C2203/0735 ,  G01N27/223 ,  G01N27/227 ,  H05K999/99

摘要： Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.

摘要翻译： 可以在一个示例中实现的方法和结构，以共同整合用于薄膜封装和形成微电子器件和微机电系统（MEMS）例如传感器和致动器的过程。 例如，可以使用相同的基本工艺流程来制造具有不同特性的结构，通过选择与基本工艺流程一起使用的不同工艺选项或模块以便创建所需的结构。 可以通过各种公开的处理流程序列有利地实现各种处理流程序列以及各种设备设计结构。

公开(公告)号：US08835207B2

公开(公告)日：2014-09-16

申请号：US13750615

申请日：2013-01-25

申请人： Renesas Electronics Corporation

发明人： Koichi Arai

IPC分类号： H01L21/02 ,  B81C1/00 ,  B81C3/00 ,  H01L29/84 ,  H01L23/48 ,  B81B3/00

CPC分类号： B81B3/0072 ,  B81B3/00 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00896 ,  B81C3/00 ,  B81C2201/056 ,  G01L9/0042 ,  G01L19/06 ,  H01L29/84 ,  H01L2224/13 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.

摘要翻译： 在制造在单个半导体芯片上具有MEMS元件的半导体集成电路器件的方法中，MEMS元件的可移动部件在形成重新布线之前被固定。 在重新布线形成之后，晶片被切割。 然后，通过蚀刻晶片来释放MEMS元件的可移动部分。

公开(公告)号：US08211729B2

公开(公告)日：2012-07-03

申请号：US12793156

申请日：2010-06-03

申请人： Cecilia Dupre ,  Philippe Robert

发明人： Cecilia Dupre ,  Philippe Robert

IPC分类号： H01L21/302

CPC分类号： B81C1/00476 ,  B81B2203/0109 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/056 ,  B81C2203/0728 ,  H01L21/84 ,  H03H3/0073 ,  H03H9/2463 ,  H03H2009/02314

摘要： A method for making a microelectronic device comprising at least one electromechanical component provided with a mobile structure, the method comprising the steps of: forming in at least one fine semiconducting thin layer lying on a supporting layer, at least one bar bound to a block, said bar being intended to form a mobile structure of an electromechanical component, withdrawing a portion of the supporting layer under said bar, forming at least one passivation layer based on dielectric material around said bar, forming an encapsulation layer around the bar and covering said passivation layer, the method further comprising steps of: making metal contact and/or interconnection areas, and then suppressing the encapsulation layer around said bar.

摘要翻译： 一种用于制造微电子器件的方法，所述微电子器件包括至少一个提供有移动结构的机电元件，所述方法包括以下步骤：在位于支撑层上的至少一个精细半导体薄层中形成至少一个与块结合的条， 所述杆旨在形成机电部件的移动结构，在所述杆下方撤回支撑层的一部分，基于围绕所述杆的电介质材料形成至少一个钝化层，围绕所述棒形成包封层并覆盖所述钝化 该方法还包括以下步骤：制造金属接触和/或互连区域，然后抑制围绕所述条的封装层。

公开(公告)号：US20100273286A1

公开(公告)日：2010-10-28

申请号：US12429305

申请日：2009-04-24

申请人： Kai-Chih Liang ,  Hua-Shu Wu ,  Li-Chun Peng ,  Tsung-Cheng Huang ,  Mingo Liu ,  Nick Y.M. Shen ,  Allen Timothy Chang

发明人： Kai-Chih Liang ,  Hua-Shu Wu ,  Li-Chun Peng ,  Tsung-Cheng Huang ,  Mingo Liu ,  Nick Y.M. Shen ,  Allen Timothy Chang

IPC分类号： H01L21/30

CPC分类号： B81C1/00246 ,  B81B2201/0257 ,  B81C2201/056 ,  B81C2203/0714 ,  B81C2203/0728

摘要： An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.

摘要翻译： 提供了一种方法的实施例，其包括提供具有前侧和后侧的基底。 在衬底上形成CMOS器件。 在该基板上也形成有MEMS器件。 形成MEMS器件包括在衬底的前侧形成MEMS机械结构。 然后释放MEMS机械结构。 在基板的前侧形成有保护层。 保护层设置在释放的MEMS机械结构上（例如，保护MEMS结构）。 在保护层设置在MEMS机械结构上的同时处理衬底的背面。

公开(公告)号：US07358579B2

公开(公告)日：2008-04-15

申请号：US10185283

申请日：2002-06-28

申请人： Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

发明人： Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

IPC分类号： H01L21/00 ,  H01L29/82

CPC分类号： H01H59/0009 ,  B81B3/007 ,  B81B2201/014 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/056 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2059/0036 ,  H01H2059/0063

摘要： A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.

摘要翻译： 微机电系统开关可以包括在其自由端上耦合到更顺从或柔性延伸部的相对刚性的悬臂梁。 触点可以位于悬臂梁的自由端。 该延伸部分减小了所需的致动电压，并补偿了关闭开关时悬臂梁的相对刚度。 在打开开关时，悬臂梁的刚度可以有利地实现更快的操作，这在更高的频率情况下是可取的。

公开(公告)号：US06951769B2

公开(公告)日：2005-10-04

申请号：US10454198

申请日：2003-06-04

申请人： Joshua Malone

发明人： Joshua Malone

IPC分类号： B81C1/00 ,  G02B26/08 ,  H01L21/00 ,  H01L21/302

CPC分类号： B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

摘要： The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

摘要翻译： 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

公开(公告)号：US06790698B2

公开(公告)日：2004-09-14

申请号：US09954861

申请日：2001-09-18

申请人： Michael F. Miller ,  Minh Van Le ,  Christopher C. Cook ,  Dale C. Flanders ,  Steven F. Nagle

发明人： Michael F. Miller ,  Minh Van Le ,  Christopher C. Cook ,  Dale C. Flanders ,  Steven F. Nagle

IPC分类号： H01L2100

CPC分类号： B81B3/0083 ,  B81B2201/042 ,  B81B2201/047 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/053 ,  B81C2201/056 ,  G02B26/001

摘要： A process for patterning dielectric layers of the type typically found in optical coatings in the context of MEMS manufacturing is disclosed. A dielectric coating is deposited over a device layer, which has or will be released, and patterned using a mask layer. In one example, the coating is etched using the mask layer as a protection layer. In another example, a lift-off process is shown. The primary advantage of photolithographic patterning of the dielectric layers in optical MEMS devices is that higher levels of consistency can be achieved in fabrication, such as size, location, and residual material stress. Competing techniques such as shadow masking yield lower quality features and are difficult to align. Further, the minimum feature size that can be obtained with shadow masks is limited to ˜100 &mgr;m, depending on the coating system geometry, and they require hard contact with the surface of the wafer, which can lead to damage and/or particulate contamination.

摘要翻译： 公开了一种用于在MEMS制造的上下文中通常在光学涂层中发现的类型的介电层图案的工艺。 电介质涂层沉积在器件层上，器件层已经或将被释放，并使用掩模层进行图案化。 在一个实例中，使用掩模层作为保护层来蚀刻涂层。 在另一示例中，示出了剥离过程。 光学MEMS器件中电介质层的光刻图案的主要优点是可以在诸如尺寸，位置和残余材料应力的制造中实现更高水平的稠度。 诸如阴影掩蔽的竞争技术产生较低的质量特征并且难以对准。 此外，根据涂层系统的几何形状，使用荫罩可获得的最小特征尺寸限制在〜100μm，并且它们需要与晶片的表面硬接触，这可能导致损坏和/或微粒污染。