公开(公告)号：US11574592B2

公开(公告)日：2023-02-07

申请号：US17397878

申请日：2021-08-09

申请人： Samsung Display Co., Ltd.

发明人： Eung Taek Kim ,  Hee Yeon Kim ,  Hwang Sup Shin ,  Na Lae Lee ,  Jin Suk Lee ,  Taek Geun Lee ,  Joo Hyeon Jo ,  Jung Mi Choi ,  Hong Jun Choi ,  Young In Hwang

IPC分类号： G09G3/3233 ,  H01L27/32 ,  H01L29/786

摘要： A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

公开(公告)号：US12133425B2

公开(公告)日：2024-10-29

申请号：US17398742

申请日：2021-08-10

申请人： Samsung Display Co., Ltd.

发明人： Eung Taek Kim ,  Kohei Ebisuno ,  Suk Hoon Ku ,  Jin Suk Lee ,  Jung Mi Choi ,  Young In Hwang ,  Tae Sik Kim ,  Jin Suk Seo ,  Hwang Sup Shin ,  Taek Geun Lee ,  Joo Hyeon Jo ,  Hong Jun Choi ,  Hee Yeon Kim ,  Na Lae Lee

IPC分类号： G09G3/00 ,  H01L29/792 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  G09G3/3208

CPC分类号： H10K59/124 ,  H01L29/792 ,  H10K59/123 ,  H10K59/131 ,  G09G3/3208

摘要： A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

公开(公告)号：US11825673B2

公开(公告)日：2023-11-21

申请号：US17146845

申请日：2021-01-12

申请人： Samsung Display Co., Ltd.

发明人： Jin-Suk Seo ,  Eung Taek Kim ,  Tae Sik Kim ,  Hee Yeon Kim ,  Jong Hyun Yun ,  Na Lae Lee ,  Jin-Suk Lee ,  Joo Hyeon Jo

IPC分类号： H10K50/13 ,  H10K85/60

CPC分类号： H10K50/13 ,  H10K85/621

摘要： A display device includes: a substrate; a transistor positioned on the substrate; and a light-emitting device electrically connected to the transistor, wherein the substrate includes a first layer, a second layer positioned between the first layer and the transistor, and a third layer positioned between the second layer and the transistor, the first layer and the third layer include organic materials, and the organic material included by the first layer and the organic material included by the third layer have different half-lives for a corona discharge.

公开(公告)号：US11610957B2

公开(公告)日：2023-03-21

申请号：US17160562

申请日：2021-01-28

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Tetsuhiro Tanaka ,  Yeong-Gyu Kim ,  Tae Sik Kim ,  Hee Yeon Kim ,  Ki Seong Seo ,  Seung Hyun Lee ,  Kyeong Woo Jang ,  Sug Woo Jung

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786

摘要： A display device includes a first thin film transistor disposed on a substrate. A first insulating interlayer covers the first thin film transistor. An active pattern is disposed on the first insulating interlayer. The active pattern includes indium-gallium-zinc oxide (IGZO) having a thickness in a range of about 150 Å to about 400 Å. A gate insulation layer covers the active pattern. A gate pattern is disposed on the gate insulation layer. A second insulating interlayer covers the gate pattern.