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    Display device
    1.
    发明授权
    Display device 有权

    公开(公告)号：US11362161B2

    公开(公告)日：2022-06-14

    申请号：US16823119

    申请日：2020-03-18

    申请人： Samsung Display Co., Ltd.

    发明人： Young In Hwang ,  Ji Hye Kong ,  Suk Hoon Ku ,  Sung Wook Kim ,  Jin A Lee ,  Yun Sik Joo

    IPC分类号： H01L27/32 ,  G09G3/3233 ,  H01L29/786 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/12

    摘要： A display device includes pixels. Each of the pixels includes: a first transistor including a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node; a second transistor including a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node; a first sub-transistor including a gate electrode connected to the first scan line, a first electrode connected to the first node, and a second electrode connected to a fourth node; and a second sub-transistor including a gate electrode connected to the first scan line, a first electrode connected to the fourth node, and a second electrode connected to the third node. A channel width of the second sub-transistor is wider than a channel width of the first sub-transistor.

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING OF THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING OF THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20160043233A1

    公开(公告)日：2016-02-11

    申请号：US14637224

    申请日：2015-03-03

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Suk Hoon Ku ,  Hyunduck Cho

    IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/36 ,  H01L21/3213 ,  H01L21/283 ,  H01L29/417 ,  H01L29/66 ,  H01L21/311

    CPC分类号： H01L29/78609 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618

    摘要： Provided are a thin film transistor (TFT) and a method of manufacturing the TFT. The TFT includes a substrate; a first conductive type semiconductor layer on the substrate and having a recess; second conductive type spacers at opposite side walls in the recess; a main semiconductor layer covering the first conductive type semiconductor layer and the second conductive type spacers and comprising a channel region and source and drain regions; a gate insulating layer on the main semiconductor layer; and a gate electrode on the gate insulating layer and corresponding to the recess.

    摘要翻译： 提供薄膜晶体管（TFT）和制造TFT的方法。 TFT包括基板; 在所述基板上的第一导电型半导体层，并具有凹部; 在凹槽中相对侧壁上的第二导电型间隔物; 覆盖所述第一导电型半导体层和所述第二导电型间隔物的主半导体层，并且包括沟道区域和源极和漏极区域; 主半导体层上的栅极绝缘层; 以及栅极绝缘层上的对应于凹部的栅电极。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME
    6.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
    薄膜晶体管和包括其的显示器件

    公开(公告)号：US20160027854A1

    公开(公告)日：2016-01-28

    申请号：US14709411

    申请日：2015-05-11

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Suk Hoon Ku

    IPC分类号： H01L27/32 ,  H01L29/786

    CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869

    摘要： A thin film transistor includes: a semiconductor layer on a base substrate, and having a source region, a drain region, and a channel region; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and overlapping the channel region; an interlayer insulating layer covering the gate electrode; a source electrode and a drain electrode on the interlayer insulating layer and respectively coupled to the source region and the drain region; and a temperature adjusting member configured to adjust a temperature of the channel region by heating the channel region.

    摘要翻译： 薄膜晶体管包括：在基底基板上的半导体层，并具有源极区，漏极区和沟道区; 覆盖半导体层的栅极绝缘层; 栅极绝缘层上的栅电极，与沟道区重叠; 覆盖栅电极的层间绝缘层; 源极电极和漏极电极，分别耦合到源极区域和漏极区域; 以及温度调节部件，被配置为通过加热所述通道区域来调节所述通道区域的温度。