Pixel and display device using the same

    公开(公告)号:US12154505B2

    公开(公告)日:2024-11-26

    申请号:US18226355

    申请日:2023-07-26

    Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.

    Display device
    2.
    发明授权

    公开(公告)号:US11501711B2

    公开(公告)日:2022-11-15

    申请号:US16906688

    申请日:2020-06-19

    Abstract: A display device includes: a (k−1)-th scan line and a k-th scan line which are parallel to each other; a j-th data line which crosses the (k−1)-th scan line and the k-th scan line; and a subpixel connected to the (k−1)-th scan line, the k-th scan line, and the j-th data line, wherein the subpixel includes: a driving transistor configured to control a driving current flowing from a first electrode thereof to a second electrode thereof according to a data voltage applied to a first gate electrode thereof, the driving transistor having a second gate electrode connected to the (k−1)-th scan line; and a light emitting element configured to emit light according to the driving current.

    Pixel circuit and display device including the same

    公开(公告)号:US12249284B2

    公开(公告)日:2025-03-11

    申请号:US17028384

    申请日:2020-09-22

    Abstract: Provided are a pixel circuit and a display device having the pixel circuit. The pixel circuit includes an organic light emitting diode, a switching transistor, a storage capacitor, and a driving transistor. The switching transistor is turned off when a scan signal has a first voltage and turned on when the scan signal has a second voltage. The storage capacitor stores a data voltage when the switching transistor is turned on in response to the scan signal. The driving transistor is electrically connected with the organic light emitting diode between a high power supply voltage and a low power supply voltage to provide a driving current to the organic light emitting diode, and includes a first bottom gate electrode that is provided with the first voltage. The driving current corresponds to the data voltage stored in the storage capacitor.

    DISPLAY PANEL OF AN ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING A PENTILE PIXEL STRUCTURE

    公开(公告)号:US20210134892A1

    公开(公告)日:2021-05-06

    申请号:US16920366

    申请日:2020-07-02

    Abstract: A display panel may include a first OLED disposed in a first sub-pixel region and emitting light of a first color, a second OLED disposed in a second sub-pixel region and emitting light of a second color, a third OLED disposed in a third sub-pixel region and emitting light of a third color, a fourth OLED disposed in a fourth sub-pixel region and emitting light of the second color, a first sub-pixel circuit disposed in the first sub-pixel region and driving the third OLED in the third sub-pixel region, a second sub-pixel circuit disposed in the second sub-pixel region and driving the first OLED in the first sub-pixel region, a third sub-pixel circuit disposed in the third sub-pixel region and driving the fourth OLED in the fourth sub-pixel region, and a fourth sub-pixel circuit disposed in the fourth sub-pixel region and driving the second OLED in the second sub-pixel region.

    Display device
    9.
    发明授权

    公开(公告)号:US11574592B2

    公开(公告)日:2023-02-07

    申请号:US17397878

    申请日:2021-08-09

    Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

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