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公开(公告)号:US12154505B2
公开(公告)日:2024-11-26
申请号:US18226355
申请日:2023-07-26
Applicant: Samsung Display Co., Ltd.
Inventor: Young-In Hwang , Sung Ho Kim , Eung Taek Kim , Yong Ho Yang , Seong Min Wang , Jung-Mi Choi
IPC: G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , H10K59/131
Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.
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公开(公告)号:US11501711B2
公开(公告)日:2022-11-15
申请号:US16906688
申请日:2020-06-19
Applicant: Samsung Display Co., Ltd.
Inventor: Young In Hwang , Sung Ho Kim , Eung Taek Kim , Joo Hyeon Jo , Jung Mi Choi , Seong Baik Chu
IPC: G09G3/30 , G09G5/00 , G09G3/325 , G09G3/3291 , G09G3/3266
Abstract: A display device includes: a (k−1)-th scan line and a k-th scan line which are parallel to each other; a j-th data line which crosses the (k−1)-th scan line and the k-th scan line; and a subpixel connected to the (k−1)-th scan line, the k-th scan line, and the j-th data line, wherein the subpixel includes: a driving transistor configured to control a driving current flowing from a first electrode thereof to a second electrode thereof according to a data voltage applied to a first gate electrode thereof, the driving transistor having a second gate electrode connected to the (k−1)-th scan line; and a light emitting element configured to emit light according to the driving current.
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公开(公告)号:US12249284B2
公开(公告)日:2025-03-11
申请号:US17028384
申请日:2020-09-22
Applicant: Samsung Display Co., LTD.
Inventor: Jung-Mi Choi , Young-In Hwang , Eung Taek Kim , Yong Ho Yang , Joo Hyeon Jo , Seong Baik Chu
IPC: G09G3/3258 , G09G3/3266 , G09G3/3275
Abstract: Provided are a pixel circuit and a display device having the pixel circuit. The pixel circuit includes an organic light emitting diode, a switching transistor, a storage capacitor, and a driving transistor. The switching transistor is turned off when a scan signal has a first voltage and turned on when the scan signal has a second voltage. The storage capacitor stores a data voltage when the switching transistor is turned on in response to the scan signal. The driving transistor is electrically connected with the organic light emitting diode between a high power supply voltage and a low power supply voltage to provide a driving current to the organic light emitting diode, and includes a first bottom gate electrode that is provided with the first voltage. The driving current corresponds to the data voltage stored in the storage capacitor.
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公开(公告)号:US12133425B2
公开(公告)日:2024-10-29
申请号:US17398742
申请日:2021-08-10
Applicant: Samsung Display Co., Ltd.
Inventor: Eung Taek Kim , Kohei Ebisuno , Suk Hoon Ku , Jin Suk Lee , Jung Mi Choi , Young In Hwang , Tae Sik Kim , Jin Suk Seo , Hwang Sup Shin , Taek Geun Lee , Joo Hyeon Jo , Hong Jun Choi , Hee Yeon Kim , Na Lae Lee
IPC: G09G3/00 , H01L29/792 , H10K59/123 , H10K59/124 , H10K59/131 , G09G3/3208
CPC classification number: H10K59/124 , H01L29/792 , H10K59/123 , H10K59/131 , G09G3/3208
Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.
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公开(公告)号:US11727877B2
公开(公告)日:2023-08-15
申请号:US17891877
申请日:2022-08-19
Applicant: Samsung Display Co., Ltd.
Inventor: Young-In Hwang , Sung Ho Kim , Eung Taek Kim , Yong Ho Yang , Seong Min Wang , Jung-Mi Choi
IPC: G09G3/3233 , G09G3/3291 , G09G3/3266 , G09G3/3258 , H10K59/131
CPC classification number: G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , H10K59/131 , G09G2300/0426 , G09G2300/0809 , G09G2320/0214
Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.
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公开(公告)号:US11825673B2
公开(公告)日:2023-11-21
申请号:US17146845
申请日:2021-01-12
Applicant: Samsung Display Co., Ltd.
Inventor: Jin-Suk Seo , Eung Taek Kim , Tae Sik Kim , Hee Yeon Kim , Jong Hyun Yun , Na Lae Lee , Jin-Suk Lee , Joo Hyeon Jo
CPC classification number: H10K50/13 , H10K85/621
Abstract: A display device includes: a substrate; a transistor positioned on the substrate; and a light-emitting device electrically connected to the transistor, wherein the substrate includes a first layer, a second layer positioned between the first layer and the transistor, and a third layer positioned between the second layer and the transistor, the first layer and the third layer include organic materials, and the organic material included by the first layer and the organic material included by the third layer have different half-lives for a corona discharge.
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公开(公告)号:US20210134892A1
公开(公告)日:2021-05-06
申请号:US16920366
申请日:2020-07-02
Applicant: Samsung Display Co., LTD.
Inventor: Young-In HWANG , Eung Taek Kim , Yong Ho YANG , Seong Min WANG , Joo Hyeon JO , Jung-Mi CHOI , Seong Baik CHU
IPC: H01L27/32 , G09G3/3266 , G09G3/3275
Abstract: A display panel may include a first OLED disposed in a first sub-pixel region and emitting light of a first color, a second OLED disposed in a second sub-pixel region and emitting light of a second color, a third OLED disposed in a third sub-pixel region and emitting light of a third color, a fourth OLED disposed in a fourth sub-pixel region and emitting light of the second color, a first sub-pixel circuit disposed in the first sub-pixel region and driving the third OLED in the third sub-pixel region, a second sub-pixel circuit disposed in the second sub-pixel region and driving the first OLED in the first sub-pixel region, a third sub-pixel circuit disposed in the third sub-pixel region and driving the fourth OLED in the fourth sub-pixel region, and a fourth sub-pixel circuit disposed in the fourth sub-pixel region and driving the second OLED in the second sub-pixel region.
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公开(公告)号:US10902774B2
公开(公告)日:2021-01-26
申请号:US16285080
申请日:2019-02-25
Applicant: Samsung Display Co., Ltd.
Inventor: Young-In Hwang , Sung Ho Kim , Eung Taek Kim , Yong Ho Yang , Seong Min Wang , Jung-Mi Choi
IPC: G09G3/3233 , G09G3/3291 , G09G3/3266 , H01L27/32 , G09G3/3258
Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.
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公开(公告)号:US11574592B2
公开(公告)日:2023-02-07
申请号:US17397878
申请日:2021-08-09
Applicant: Samsung Display Co., Ltd.
Inventor: Eung Taek Kim , Hee Yeon Kim , Hwang Sup Shin , Na Lae Lee , Jin Suk Lee , Taek Geun Lee , Joo Hyeon Jo , Jung Mi Choi , Hong Jun Choi , Young In Hwang
IPC: G09G3/3233 , H01L27/32 , H01L29/786
Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.
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公开(公告)号:US11423835B2
公开(公告)日:2022-08-23
申请号:US17157768
申请日:2021-01-25
Applicant: Samsung Display Co., Ltd.
Inventor: Young-In Hwang , Sung Ho Kim , Eung Taek Kim , Yong Ho Yang , Seong Min Wang , Jung-Mi Choi
IPC: G09G3/3233 , G09G3/3291 , G09G3/3266 , H01L27/32 , G09G3/3258
Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.
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