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公开(公告)号：US10998393B2
公开(公告)日：2021-05-04
申请号：US16822222
申请日：2020-03-18
发明人： Woo Ho Jeong , Se Myung Kwon , Yoon Ho Kim , Seok Je Seong , Joon Hoo Choi
IPC分类号： H01L27/32 , H01L29/786 , H01L21/477 , H01L29/66
摘要： An organic fight-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.
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公开(公告)号：US12052893B2
公开(公告)日：2024-07-30
申请号：US18165502
申请日：2023-02-07
发明人： Woo Ho Jeong , Se Myung Kwon , Yoon Ho Kim , Seok Je Seong , Joon Hoo Choi
IPC分类号： H10K59/121 , H01L21/477 , H01L29/66 , H01L29/786
CPC分类号： H10K59/1213 , H01L21/477 , H01L29/66969 , H01L29/78675 , H01L29/7869
摘要： An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.
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公开(公告)号：US11997900B2
公开(公告)日：2024-05-28
申请号：US17933470
申请日：2022-09-19
发明人： Kyunghyun Baek , Seok Je Seong , Hyeonsik Kim , Yoonjee Shin , Jae Hyun Lee , Woo Ho Jeong , Yoon-Jong Cho
IPC分类号： H10K59/131 , H01L27/12 , H01L29/786 , H10K59/121 , H10K59/124
CPC分类号： H10K59/131 , H01L29/78645 , H10K59/1213 , H10K59/124 , H01L27/124 , H01L27/1248
摘要： A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.
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公开(公告)号：US10861920B2
公开(公告)日：2020-12-08
申请号：US16412059
申请日：2019-05-14
发明人： Woo Ho Jeong , Seokje Seong , Semyung Kwon , Yoon Ho Kim , Byungju Lee
IPC分类号： H01L27/32 , H01L51/00 , H01L29/66 , H01L27/12 , H01L29/786
摘要： A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.
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公开(公告)号：US11600678B2
公开(公告)日：2023-03-07
申请号：US17307606
申请日：2021-05-04
发明人： Woo Ho Jeong , Se Myung Kwon , Yoon Ho Kim , Seok Je Seong , Joon Hoo Choi
IPC分类号： H01L27/32 , H01L29/786 , H01L21/477 , H01L29/66
摘要： An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.
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公开(公告)号：US11450725B2
公开(公告)日：2022-09-20
申请号：US16844435
申请日：2020-04-09
发明人： Kyunghyun Baek , Seok Je Seong , Hyeonsik Kim , Yoonjee Shin , Jae Hyun Lee , Woo Ho Jeong , Yoon-Jong Cho
IPC分类号： H01L27/32 , H01L29/786 , H01L27/12
摘要： A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.
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