DISPLAY PANEL INCLUDING TWO SEMICONDUCTOR MATERIALS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220352274A1

    公开(公告)日:2022-11-03

    申请号:US17810705

    申请日:2022-07-05

    摘要: A display panel includes a base layer, a first thin film transistor disposed on the base layer and including a silicon semiconductor pattern, a first control electrode is spaced apart from the silicon semiconductor pattern. A first input electrode is connected to a first side of the silicon semiconductor pattern. A first output electrode is connected to a second side of the silicon semiconductor pattern. The display panel includes a second thin film transistor. An organic light emitting diode includes a first electrode connected to the first thin film transistor, a second electrode, and an emission layer. A first insulating layer includes openings exposing the first side and the second side of the silicon semiconductor pattern, respectively. The first input electrode and the first output electrode are positioned in the openings respectively.

    Display device
    2.
    发明授权

    公开(公告)号:US12057057B2

    公开(公告)日:2024-08-06

    申请号:US18140996

    申请日:2023-04-28

    IPC分类号: G09G3/32

    摘要: A display device includes a display panel including a first sub-pixel which displays a first color and is connected to a first data line and a gate line, a gate driver which provides a gate signal to the gate line, a source driver which provides a data voltage to the first data line in a display scan period of a frame and provides a first self-scan voltage to the first data line in a self-scan period of the frame, and a timing controller which calculates a first ratio of each of grayscale values of first color image data for the first color of the frame and determines the first self-scan voltage based on the first ratio.

    Display panel and method for manufacturing the same

    公开(公告)号:US11127766B2

    公开(公告)日:2021-09-21

    申请号:US16882926

    申请日:2020-05-26

    摘要: A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower opening. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper opening extends from the lower opening. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower opening and the upper opening. A light emitting element is disposed on the organic layer.

    DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20190164998A1

    公开(公告)日:2019-05-30

    申请号:US16139512

    申请日:2018-09-24

    摘要: A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower groove. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper groove extends from the lower groove. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower groove and the upper groove. A light emitting element is disposed on the organic layer.

    PIXEL AND DISPLAY APPARATUS
    7.
    发明公开

    公开(公告)号:US20240321203A1

    公开(公告)日:2024-09-26

    申请号:US18525303

    申请日:2023-11-30

    IPC分类号: G09G3/3233 G09G3/3266

    摘要: A pixel in which a luminance difference may be reduced during low-frequency driving, and a display apparatus including the same, there is provided a pixel that operates at a first scanning rate in a first mode and operates at a second scanning rate in a second mode, wherein the pixel includes a display element having an anode and a cathode, a first transistor that controls the magnitude of a driving current flowing to the display element according to a gate-source voltage, and a second transistor that is in an off state in the first mode and transmits a bias voltage to the first transistor in response to a first scan signal in the second mode.

    Display panel and display apparatus including the same

    公开(公告)号:US11450725B2

    公开(公告)日:2022-09-20

    申请号:US16844435

    申请日:2020-04-09

    摘要: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

    Display panel and method for manufacturing the same

    公开(公告)号:US10665617B2

    公开(公告)日:2020-05-26

    申请号:US16139512

    申请日:2018-09-24

    摘要: A display panel includes a base layer including a first area and a second area. At least one inorganic layer disposed on the base layer overlaps the first area and the second area. The at least one inorganic layer comprises a lower opening. A first thin-film transistor is disposed on the at least one inorganic layer. The first thin-film transistor includes a silicon semiconductor pattern. A second thin-film transistor is disposed on the at least one inorganic layer. The second thin-film transistor includes an oxide semiconductor pattern. A plurality of insulation layers overlap the first area and the second area. An upper opening extends from the lower opening. A signal line is electrically connected to the second thin-film transistor. An organic layer is disposed in the lower opening and the upper opening. A light emitting element is disposed on the organic layer.