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公开(公告)号:US20210019082A1
公开(公告)日:2021-01-21
申请号:US16514195
申请日:2019-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: AMIT BERMAN , ARIEL DOUBCHAK , NOAM LIVNE
Abstract: A memory system including a nonvolatile memory (NVM) device and a controller is provided. The NVM device includes a main region and a spare region. The controller writes write data to a selected row of the main region, determines whether the written row is bad, and writes the write data to a spare address in the spare region and writes the spare address to the bad row, when the written row is determined to be bad.
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公开(公告)号:US20240157933A1
公开(公告)日:2024-05-16
申请号:US18511690
申请日:2023-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: AMIT BERMAN , SARIT BUZAGLO , ARIEL DOUBCHAK
Abstract: A method of simplified successive cancellation list (SSCL) error decoding of S-polar codes includes representing an S-polar code as a perfect binary tree; providing a node v a vector αv(l) of soft information from a parent node; computing a vector αvl(l) of soft information for a left child of node v; providing node v with a vector βvl(l) of hard decisions from the left child and using it with αv(l) to create a soft information vector αv(l) and passing it to a right child of node v; providing node v with a vector βvr(l) of hard decisions from its right child and using it with βvl(l) to create a hard decision vector, βv of hard decisions, and passing it to its parent node; updating, when v is a ith leaf of the perfect tree, two path metrics, and selecting paths obtained by expanding current paths with a lowest path metric.
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公开(公告)号:US20210344356A1
公开(公告)日:2021-11-04
申请号:US16865891
申请日:2020-05-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: AMIT BERMAN , ARIEL DOUBCHAK , ELI HAIM , EVGENY BLAICHMAN
IPC: H03M13/15 , H03M13/39 , H03M13/11 , G11C11/408 , G11C11/4074 , G11C7/02 , G06N3/08
Abstract: A mobile electronic device may include a memory device and a memory controller including an error correction code (ECC) encoder to encode data, a constrained channel encoder configured to encode an output of the ECC encoder based on one or more constraints, a reinforcement learning pulse programming (RLPP) component configured to identify a programming algorithm for programming the data to the memory device, an expectation maximization (EM) signal processing component configured to receive a noisy multi-wordline voltage vector from the memory device and classify each bit of the vector with a log likelihood ration (LLR) value, a constrained channel decoder configured to receive a constrained vector from the EM signal processing component and produce an unconstrained vector, and an ECC decoder configured to decode the unconstrained vector. A machine learning interference cancellation component may operate based on or independent of input from the EM signal processing component.
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公开(公告)号:US20200228144A1
公开(公告)日:2020-07-16
申请号:US16244944
申请日:2019-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor: ARIEL DOUBCHAK , Dikla Shapiro , Amit Berman
Abstract: A decoding circuit includes a Bose-Chaudhuri-Hocquenghem (BCH) decoder. The BCH decoder includes a Syndrome stage for generating syndromes based on a BCH encoded word, a Berlekamp-Massey (BM) stage performing a Berlekamp-Massey algorithm on the syndromes to generate Error Location Polynomial (ELP) coefficients, a Chien stage that performs a Chien search on the ELP coefficients using a Fast Fourier Transform (FFT) to generate error bits and iteration information, and a Frame Fixer stage configured to reorder the error bits to be sequential based on the iteration information. The BCH decoder decodes the BCH encoded word using the reordered error bits.
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