公开(公告)号：US20210118927A1

公开(公告)日：2021-04-22

申请号：US16928263

申请日：2020-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI DEOK RYAN LEE ,  JAE KYU LEE ,  SANG CHUN PARK ,  TAE YON LEE ,  JAE HOON JEON ,  MYUNG LAE CHU

IPC: H01L27/146 ,  H01L29/786 ,  H01L27/30 ,  H04N5/369

Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer

公开(公告)号：US20160351630A1

公开(公告)日：2016-12-01

申请号：US15233383

申请日：2016-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  SANG CHUL SUL ,  HIROSIGE GOTO ,  SAE YOUNG KIM ,  GWI DEOK RYAN LEE ,  MASARU ISHII ,  KYO JIN CHOO

IPC: H01L27/30

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract translation: 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

公开(公告)号：US20160142630A1

公开(公告)日：2016-05-19

申请号：US15004494

申请日：2016-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  SANG CHUL SUL ,  HIROSIGE GOTO ,  SAE YOUNG KIM ,  GWI DEOK RYAN LEE ,  MASARU ISHll ,  KYO JIN CHOO

IPC: H04N5/232 ,  H01L27/30

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.