公开(公告)号：US20160142630A1

公开(公告)日：2016-05-19

申请号：US15004494

申请日：2016-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  SANG CHUL SUL ,  HIROSIGE GOTO ,  SAE YOUNG KIM ,  GWI DEOK RYAN LEE ,  MASARU ISHll ,  KYO JIN CHOO

IPC: H04N5/232 ,  H01L27/30

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

公开(公告)号：US20180190699A1

公开(公告)日：2018-07-05

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE YON LEE ,  GWI DEOK LEE ,  MASARU ISHll ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/361 ,  H04N5/3745

CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/14667 ,  H01L27/14689 ,  H01L27/14812 ,  H04N5/361 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/379

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.