公开(公告)号：US20230148385A1

公开(公告)日：2023-05-11

申请号：US17983464

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINHO JEONG ,  HYUNGEUN KIM ,  HEESOO KIM

IPC: H01F27/28 ,  H01F27/32 ,  H01F27/30

CPC classification number: H01F27/2804 ,  H01F27/323 ,  H01F27/303 ,  H01F2027/2809

Abstract: An on-chip inductor includes a semiconductor substrate, a plurality of insulating layers stacked over the semiconductor substrate, and first, second and third spiral-shaped coil patterns. The first, second and third spiral-shaped coil patterns are inductively coupled to each other and sequentially disposed on respective layers among the plurality of insulating layers. Further, the first, second and third spiral-shaped coil patterns have respective first ends overlapping each other. The on-chip inductor further includes a first via connecting the respective first ends of the first and second spiral-shaped coil patterns to each other, and a second via connecting the respective first ends of the second and third spiral-shaped coil patterns to each other, where the first and second vias overlap each other.

公开(公告)号：US20250080142A1

公开(公告)日：2025-03-06

申请号：US18676949

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEESOO KIM ,  SANGYUN LEE ,  JEONGYEOL BAE ,  JIYOUNG LEE ,  SANGMIN YOO ,  JONGSOO LEE

IPC: H04B1/00 ,  H04B1/04 ,  H04B1/10 ,  H04B1/525

Abstract: An RF circuit including: first and second ports receiving first and second RF signals; a (1-1)-th amplification stage and a (1-2)-th amplification stage connected to the first port and a first ground to amplify the first RF signal; a (2-1)-th amplification stage and a (2-2)-th amplification stage connected to the second port and a second ground to amplify the second RF signal; a (1-1)-th switch connected to the (1-1)-th amplification stage and the second ground, and a (1-2)-th switch connected to the (1-2)-th amplification stage and the second ground; a (2-1)-th switch connected to the (2-1)-th amplification stage and the first ground, and a (2-2)-th switch connected to the (2-2)-th amplification stage and the first ground; and a mixer to mix the first RF signal or the second RF signal with an LO signal, and mix the first RF signal or the second RF signal with the LO signal.

公开(公告)号：US20150242335A1

公开(公告)日：2015-08-27

申请号：US14600121

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEESOO KIM ,  JISOO KIM

IPC: G06F12/14

CPC classification number: G06F12/1433 ,  G06F21/79 ,  G06F2221/2143

Abstract: Provided is a method for operating a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory. The method include receiving a kill request by the memory controller, performing authentication based on the received kill request by the memory controller, and entering a locked state, by the memory controller, according to the kill request when the authentication is successfully performed. In the locked state, the memory controller denies a request for access to a selected area of the nonvolatile memory.

Abstract translation: 提供了一种用于操作包括非易失性存储器和控制非易失性存储器的存储器控​​制器的存储设备的方法。 所述方法包括：当所述认证成功执行时，根据所述杀死请求，由所述存储器控制器接收所述杀死请求，基于所述存储器控制器的接收到的杀死请求进行认证，并进入锁定状态。 在锁定状态下，存储器控制器拒绝访问非易失性存储器的选定区域的请求。