公开(公告)号：US20200110547A1

公开(公告)日：2020-04-09

申请号：US16416750

申请日：2019-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGWOO LEE ,  CHANHA KIM ,  YUNJUNG LEE ,  JISOO KIM ,  SEUNGKYUNG RO ,  JINWOOK LEE ,  HEEWON LEE

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06N20/00

Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

公开(公告)号：US20150242335A1

公开(公告)日：2015-08-27

申请号：US14600121

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEESOO KIM ,  JISOO KIM

IPC: G06F12/14

CPC classification number: G06F12/1433 ,  G06F21/79 ,  G06F2221/2143

Abstract: Provided is a method for operating a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory. The method include receiving a kill request by the memory controller, performing authentication based on the received kill request by the memory controller, and entering a locked state, by the memory controller, according to the kill request when the authentication is successfully performed. In the locked state, the memory controller denies a request for access to a selected area of the nonvolatile memory.

Abstract translation: 提供了一种用于操作包括非易失性存储器和控制非易失性存储器的存储器控​​制器的存储设备的方法。 所述方法包括：当所述认证成功执行时，根据所述杀死请求，由所述存储器控制器接收所述杀死请求，基于所述存储器控制器的接收到的杀死请求进行认证，并进入锁定状态。 在锁定状态下，存储器控制器拒绝访问非易失性存储器的选定区域的请求。

公开(公告)号：US20220188236A1

公开(公告)日：2022-06-16

申请号：US17688148

申请日：2022-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-HEE MA ,  SUKHEE LEE ,  JISOO KIM

IPC: G06F12/0868 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device, a memory controller, and a buffer memory. The memory controller determines a first memory block of the nonvolatile memory device, which is targeted for a read reclaim operation, and reads target data from a target area of the first memory block. The target data are stored in the buffer memory. The memory controller reads at least a portion of the target data stored in the buffer memory in response to a read request corresponding to at least a portion of the target area.