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    NON-VOLATILE MEMORY DEVICE INCLUDING PASS TRANSISTOR
    1.
    发明申请
    NON-VOLATILE MEMORY DEVICE INCLUDING PASS TRANSISTOR 有权

    公开(公告)号：US20230019217A1

    公开(公告)日：2023-01-19

    申请号：US17709790

    申请日：2022-03-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tackhwi LEE ,  Jaeduk LEE ,  Hojun LEE ,  Seongpil CHANG

    IPC: H01L27/112 ,  G11C16/08 ,  G11C16/12

    Abstract: A non-volatile memory device comprises a memory cell region including a plurality of cell transistors, a first-type semiconductor substrate including a peripheral circuit region including circuits configured to control the plurality of cell transistors, and a plurality of pass transistors on the peripheral circuit region of the semiconductor substrate, wherein the peripheral circuit region includes a first region and a second region which are doped to a depth at an upper portion of the semiconductor substrate while being insulated from each other by an implant region, wherein the first region is a second type different from the first type, and includes a first doped region, and a first well region beneath the first doped region and configured to have a higher doping concentration than the first doped region, wherein the second region is the first type, and includes a second doped region, and a second well region beneath the second doped region and configured to have a higher doping concentration than the second doped region, wherein a first pass transistor on the first region from among the plurality of pass transistors is connected to a string selection line or a ground selection transistor, wherein a second pass transistor on the second region from among the plurality of pass transistors is connected to a word line, wherein a positive voltage or a negative voltage is configured to be applied to the second well region during operation of the second pass transistor.

    METHOD OF MANAGING SEMICONDUCTOR PROCESSING APPARATUS
    4.
    发明公开
    METHOD OF MANAGING SEMICONDUCTOR PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20240272561A1

    公开(公告)日：2024-08-15

    申请号：US18373030

    申请日：2023-09-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junho SHIN ,  Seungbeom PARK ,  Jangwoon SUNG ,  Hojun LEE ,  Wookrae KIM ,  Myungjun LEE

    IPC: G03F7/00 ,  G06T7/00

    CPC classification number: G03F7/706839 ,  G03F7/706 ,  G03F7/70641 ,  G06T7/001 ,  G06T2207/30148

    Abstract: Provided is a method of managing a semiconductor processing apparatus, including irradiating, by a light source, a plurality of regions included in a diffuser on a mask stage with extreme ultraviolet (EUV) light, reflecting or transmitting, by the diffuser, the EUV light, transmitting, by an optical system, the EUV light from the diffuser, receiving, by an image sensor, the EUV light from the optical system, obtaining, by the image sensor, a plurality of original images corresponding to the plurality of regions, generating, based on an optical prediction model, a plurality of predictive images estimating a diffraction pattern in the image sensor, adjusting an optical prediction model by comparing the plurality of predictive images with the plurality of original images, and generating, based on the optical prediction model, a plurality of wavefront images corresponding to optical characteristics of each of the plurality of mirrors.

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