公开(公告)号：US20210124258A1

公开(公告)日：2021-04-29

申请号：US16872444

申请日：2020-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hungbae AHN ,  Sangoh PARK ,  Sunggon JUNG

IPC: G03F1/70 ,  H01L27/108 ,  H01L21/033 ,  H01L21/768

Abstract: A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.

公开(公告)号：US20250155794A1

公开(公告)日：2025-05-15

申请号：US18656776

申请日：2024-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeonghwan KANG ,  Hungbae AHN ,  Sangoh PARK

IPC: G03F1/36 ,  G03F1/76

Abstract: Some example embodiments provide an optical proximity correction (OPC) method using an OPC model having improved performance and/or a method of manufacturing a mask by using the OPC method. An OPC method includes receiving a design layout of a target pattern, generating a first OPC model on the design layout, in which an optical effect of an exposure process is reflected, generating a second OPC model in which a characteristic of a photoresist in the exposure process is reflected, and performing a simulation using the first and second OPC models to obtain an OPC-performed design layout. The generating the second OPC model includes differently applying a combination of kernel functions, used in the second OPC model, to each pattern region.

公开(公告)号：US20230054175A1

公开(公告)日：2023-02-23

申请号：US17703338

申请日：2022-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hungbae AHN ,  Sangoh PARK ,  Jinho LEE

IPC: G06F30/392 ,  G06F30/398

Abstract: A pattern layout design method includes performing optical proximity correction (OPC) for a mask layout, thereby creating a corrected layout. Creation of the corrected layout includes creating a first corrected layout through grid snapping for an oblique edge of a mask layout designed on a grid layout, and performing optical proximity correction (OPC) for the first corrected layout, thereby creating a second corrected layout. Creation of the first corrected layout includes creating a first divisional point for the oblique edge or a residual edge, and shifting the first divisional point to one of four reference points adjacent to the first divisional point, thereby creating a first varied divisional point.