公开(公告)号：US20240242317A1

公开(公告)日：2024-07-18

申请号：US18528427

申请日：2023-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu KANG ,  Kwangeun KIM ,  Janghoon KIM ,  Seoyoung PARK ,  Sangho YUN ,  Sungeun LEE ,  Woojin JUNG

IPC: G06T5/00

CPC classification number: G06T5/006 ,  G06T2207/10061

Abstract: An scanning electron microscope (SEM) image distortion correction method includes obtaining at least one SEM image of holes provided on a wafer in a two-dimensional array structure, the holes including at least one central hole within a central region of the at least one SEM image and a plurality of peripheral holes outside the central region, expanding each of the plurality of peripheral holes in a minor axis direction such that a ratio of a minor axis to a major axis of each of the plurality of peripheral holes is about 1:1, and expanding each of the plurality of peripheral holes in multiple directions in the at least one SEM image such that a diameter of the at least one central hole and a diameter of at least one of the plurality of peripheral holes are substantially equal to each other.

公开(公告)号：US20240152043A1

公开(公告)日：2024-05-09

申请号：US18381731

申请日：2023-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minseung SONG ,  Janghoon KIM ,  Sangho YUN ,  Chan HWANG

IPC: G03F1/22 ,  G03F1/70 ,  G03F1/80 ,  G03F7/00

CPC classification number: G03F1/22 ,  G03F1/70 ,  G03F1/80 ,  G03F7/70616

Abstract: A method of manufacturing an extreme ultraviolet mask including preparing a preliminary layout, forming a plurality of preliminary target patterns by using a plurality of preliminary spacer patterns formed by using the preliminary layout, evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns, preparing a layout configured to form a plurality of spacer patterns by modifying the preliminary layout when the plurality of preliminary target patterns include the abnormal target pattern, and manufacturing an extreme ultraviolet mask with the layout to form a plurality of target patterns by using the plurality of spacer patterns, wherein, the plurality of preliminary spacer patterns extend in one direction.