公开(公告)号：US20240069777A1

公开(公告)日：2024-02-29

申请号：US18238282

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keunsan Park ,  Gyeongmin Kim ,  Joon-Whan Bae ,  Heetak Shin

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0652 ,  G06F3/0679 ,  G06F3/0604

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller including an internal buffer including zone buffers, and configured to: allocate a plurality of zones to a storage space, select two or more erase units to be allocated to each zone based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, based on reads for sequential logical addresses being requested by the external host device, read first data corresponding to the sequential logical addresses from the nonvolatile memory device, and output the first data to the external host device, and based on the reads being requested, perform a prefetch operation by reading second data corresponding to next sequential logical addresses, and storing the second data in the internal buffer, without receiving a next read request from the external host device.

公开(公告)号：US12298902B2

公开(公告)日：2025-05-13

申请号：US18237806

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Whan Bae ,  Junyeong Han ,  Kui-Yon Mun ,  Heetak Shin

IPC: G06F12/00 ,  G06F3/06 ,  G06F11/10 ,  G06F11/14 ,  G06F12/02

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

公开(公告)号：US12292827B2

公开(公告)日：2025-05-06

申请号：US18238262

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghyun Choi ,  Keunsan Park ,  Heetak Shin ,  Junyeong Han ,  Gyeongmin Kim ,  Joon-Whan Bae ,  Jooyoung Hwang

IPC: G06F11/10 ,  G06F3/06 ,  G06F11/14 ,  G06F12/02

Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.