公开(公告)号：US20140103412A1

公开(公告)日：2014-04-17

申请号：US14037691

申请日：2013-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANG-MIN LEE ,  WONJOO KIM ,  DOOCHEOL PARK ,  JUNG BIN YUN ,  JUNGWOOK LIM

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14645

Abstract: A three-dimensional image sensor includes a first photoelectric converter in a first pixel region of a substrate, a second photoelectric converter in a second pixel region of the substrate, a first transfer gate structure disposed on the substrate at one side of the first photoelectric converter, a second transfer gate structure and a drain gate structure disposed on the substrate at opposite sides of the second photoelectric converter and whose gate insulating layers are thinner the gate insulating layer of the first transfer gate structure. The gate insulating layers can be fabricated by forming a first insulating layer on the pixel regions of the substrate, removing part of the first insulating layer from the second pixel region, and subsequently forming a second insulating layer on the substrate including over a part of the first insulating layer which remains on the first pixel region.

Abstract translation: 三维图像传感器包括基板的第一像素区域中的第一光电转换器，基板的第二像素区域中的第二光电转换器，设置在第一光电转换器的一侧的基板上的第一传输栅极结构 ，第二传输栅极结构和漏极栅极结构，其设置在第二光电转换器的相对侧的基板上，栅极绝缘层的厚度较薄，第一传输栅极结构的栅极绝缘层较薄。 栅极绝缘层可以通过在衬底的像素区域上形成第一绝缘层，从第二像素区域去除第一绝缘层的一部分，然后在衬底上形成第二绝缘层来制造，该第二绝缘层包括一部分 第一绝缘层，其保留在第一像素区域上。

公开(公告)号：US20180190696A1

公开(公告)日：2018-07-05

申请号：US15653537

申请日：2017-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  KWANG-MIN LEE ,  BEOM-SUK LEE ,  TAE-YON LEE

IPC: H01L27/146 ,  H01L27/28

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14683 ,  H01L27/28 ,  H01L27/307

Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

公开(公告)号：US20190305022A1

公开(公告)日：2019-10-03

申请号：US16428940

申请日：2019-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  KWANG-MIN LEE ,  BEOM-SUK LEE ,  TAE-YON LEE

IPC: H01L27/146 ,  H01L27/28 ,  H01L27/30

Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.