公开(公告)号：US09287327B2

公开(公告)日：2016-03-15

申请号：US14310305

申请日：2014-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H04N5/225 ,  H01L27/30 ,  H04N9/04

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract translation: 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

公开(公告)号：US09294703B2

公开(公告)日：2016-03-22

申请号：US14095082

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Jin Choo ,  Eun Young Jin

IPC: H04L12/40 ,  H04N5/378 ,  H04N5/374

CPC classification number: H04N5/378 ,  H04N5/3742

Abstract: A data transmission circuit of an image sensor includes first to Kth bus segments, and first to Kth data regeneration circuits respectively connected to the first to Kth bus segments and the first to (K−1)th data regeneration circuits respectively connected to the second to Kth bus segments. Each of the first to Kth data regeneration circuits may be embodied as one of a buffer, a logic gate, and a synchronous circuit operating in response to a clock signal.

Abstract translation: 图像传感器的数据传输电路包括第一至第K总线段，以及分别连接到第一至第K总线段的第一至第K个数据再生电路以及分别连接到第二至第K总线段的第一至第（K-1）个数据再生电路 第七巴士段。 第一至第K数据再生电路中的每一个可以实现为响应于时钟信号而工作的缓冲器，逻辑门和同步电路之一。

公开(公告)号：US09954034B2

公开(公告)日：2018-04-24

申请号：US15630571

申请日：2017-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H04N5/232 ,  H01L27/30 ,  H01L51/44 ,  H04N9/04 ,  H04N5/376 ,  H04N5/378

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

公开(公告)号：US09905615B2

公开(公告)日：2018-02-27

申请号：US15233383

申请日：2016-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H04N5/232 ,  H01L27/30 ,  H01L51/44 ,  H04N9/04 ,  H04N5/376 ,  H04N5/378

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

公开(公告)号：US20170294487A1

公开(公告)日：2017-10-12

申请号：US15630571

申请日：2017-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.