公开(公告)号：US20210020695A1

公开(公告)日：2021-01-21

申请号：US16789546

申请日：2020-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon BAK ,  Woojin KIM ,  Junghwan MOON ,  Seowon LEE ,  Nayoung JI

IPC: H01L27/24 ,  H01L27/22 ,  G11C13/00

Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.