公开(公告)号：US20210020695A1

公开(公告)日：2021-01-21

申请号：US16789546

申请日：2020-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon BAK ,  Woojin KIM ,  Junghwan MOON ,  Seowon LEE ,  Nayoung JI

IPC: H01L27/24 ,  H01L27/22 ,  G11C13/00

Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

公开(公告)号：US20210050508A1

公开(公告)日：2021-02-18

申请号：US16829216

申请日：2020-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seowon LEE ,  Junghwan MOON ,  Junghoon BAK ,  Woojin KIM ,  Hyeongsun HONG

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01F10/32

Abstract: A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.