VARIABLE RESISTANCE MEMORY DEVICE

    公开(公告)号:US20210020695A1

    公开(公告)日:2021-01-21

    申请号:US16789546

    申请日:2020-02-13

    Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

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