公开(公告)号：US12002519B2

公开(公告)日：2024-06-04

申请号：US17534989

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Yunjung Lee ,  Heewon Lee ,  Kwangwoo Lee

IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C16/3495 ,  G11C16/0483

Abstract: Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

公开(公告)号：US12242746B2

公开(公告)日：2025-03-04

申请号：US18196788

申请日：2023-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Kwangwoo Lee ,  Heewon Lee ,  Byungchan Park ,  Hyojin Ahn ,  Dongcheul Jang

IPC: G06F3/06

Abstract: There is provided a storage device, which includes: a memory device that includes a plurality of memory blocks, and stores first meta data including first status data and a first parameter in a first memory block among the plurality of memory blocks; and a memory controller that stores second meta data including second status data and second parameters, determines final meta data among a plurality of pieces of meta data including the first meta data and the second status data by comparing a plurality of pieces of status data with the first status data and the second status data, performs parameter confirmation for storing the final meta data in the meta block, and controls the memory device based on a parameter stored in the meta block.

公开(公告)号：US20250104784A1

公开(公告)日：2025-03-27

申请号：US18762272

申请日：2024-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JunHo KIM ,  Sangjin Yoo ,  Kwangwoo Lee ,  Jeongwoo Lee ,  Heewon Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C29/52

Abstract: A data recover read (DRR) operation method of a nonvolatile memory system includes: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, based on the cell count value for the adjacent wordline; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation.

公开(公告)号：US11914892B2

公开(公告)日：2024-02-27

申请号：US17742030

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Sangjin Yoo ,  Yeonji Kim ,  Jeongkeun Park ,  Jeongwoo Lee

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

公开(公告)号：US20230066982A1

公开(公告)日：2023-03-02

申请号：US17742030

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Sangjin Yoo ,  Yeonji Kim ,  Jeongkeun Park ,  Jeongwoo Lee

IPC: G06F3/06

Abstract: A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.