公开(公告)号：US20220037328A1

公开(公告)日：2022-02-03

申请号：US17210931

申请日：2021-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyewon KIM ,  Juhyung WE ,  Sungmi YOON ,  Donghyun IM ,  Sangwoon LEE ,  Taiuk RIM ,  Kyosuk CHAE

IPC: H01L27/108

Abstract: A semiconductor device including a substrate including a recess; a gate insulation layer on a surface of the recess; a first gate pattern on the gate insulation layer and filling a lower portion of the recess; a second gate pattern on the first gate pattern in the recess and including a material having a work function different from a work function of the first gate pattern; a capping insulation pattern on the second gate pattern and filling an upper portion of the recess; a leakage blocking oxide layer on the gate insulation layer at an upper sidewall of the recess above an upper surface of the first gate pattern and contacting a sidewall of the capping insulation pattern; and impurity regions in the substrate and adjacent to the upper sidewall of the recess, each impurity region having a lower surface higher than the upper surface of the first gate pattern.

公开(公告)号：US20230143124A1

公开(公告)日：2023-05-11

申请号：US17861577

申请日：2022-07-11

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Changsoo LEE ,  Sangwoon LEE ,  Yongsung KIM ,  Jinhong KIM ,  Hyungjun KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/008

CPC classification number: H01L28/55 ,  H01L27/10852 ,  H01G4/008 ,  H01L28/75

Abstract: A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.

公开(公告)号：US20220309216A1

公开(公告)日：2022-09-29

申请号：US17491739

申请日：2021-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwoon LEE ,  Joohyun JEON ,  Sungjin KIM ,  Seunghyun KIM ,  Wonki ROH ,  Chulwoo PARK ,  Seongjae BYEON ,  Taeyoon AN ,  Hyoeun JUNG

IPC: G06F30/3308 ,  G06F30/25

Abstract: A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

公开(公告)号：US20220085144A1

公开(公告)日：2022-03-17

申请号：US17209762

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Changsoo LEE ,  Sangwoon LEE ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO

IPC: H01L49/02 ,  H01L27/108

Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z    In Formula 1, A, B, x, y, and z are disclosed in the specification.