公开(公告)号：US20220085144A1

公开(公告)日：2022-03-17

申请号：US17209762

申请日：2021-03-23

申请人： Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

发明人： Changsoo LEE ,  Sangwoon LEE ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO

IPC分类号： H01L49/02 ,  H01L27/108

摘要： Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z    In Formula 1, A, B, x, y, and z are disclosed in the specification.

公开(公告)号：US20210122644A1

公开(公告)日：2021-04-29

申请号：US16819571

申请日：2020-03-16

申请人： Samsung Electronics Co., Ltd.

发明人： Giyoung JO ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO ,  Hyeoncheol PARK ,  Changsoo LEE

IPC分类号： C01G33/00 ,  H01L27/108 ,  H01L49/02

摘要： A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

公开(公告)号：US20210110975A1

公开(公告)日：2021-04-15

申请号：US17038904

申请日：2020-09-30

申请人： Samsung Electronics Co., Ltd. ,  National Institute for Materials Science

发明人： Hyungjun KIM ,  Taniguchi TAKAAKI ,  Sasaki TAKAYOSHI ,  Osada MINORU ,  Chan KWAK ,  Youngnam KWON ,  Changsoo LEE

IPC分类号： H01G4/12 ,  H01L49/02 ,  H01G4/005

摘要： Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn−3CnO3n+1   wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

公开(公告)号：US20180261388A1

公开(公告)日：2018-09-13

申请号：US15848562

申请日：2017-12-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Daejin YANG ,  Jong Wook ROH ,  Doh Won JUNG ,  Chan KWAK ,  Hyungjun KIM ,  Woojin LEE

IPC分类号： H01G4/10 ,  H01G4/12 ,  B82B1/00 ,  B32B15/04

CPC分类号： H01G4/10 ,  B32B15/043 ,  B32B2307/204 ,  B82B1/005 ,  H01G4/1227

摘要： A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1 X2[A(n−1)MnO(3n+1)]  Chemical Formula 1 wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.

公开(公告)号：US20180204679A1

公开(公告)日：2018-07-19

申请号：US15875386

申请日：2018-01-19

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chan KWAK ,  Hyun Sik KIM ,  Jong Wook ROH ,  Kyoung-Seok MOON ,  Hyeon Cheol PARK ,  Yoon Chul SON ,  Daejin YANG ,  Doh Won JUNG ,  Youngjin CHO

IPC分类号： H01G4/30 ,  H01G4/14

CPC分类号： H01G4/30 ,  C04B35/47 ,  C04B35/62805 ,  C04B35/62815 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/6582 ,  C04B2235/6588 ,  C04B2235/781 ,  C04B2235/79 ,  C04B2235/85 ,  C04B2237/346 ,  C04B2237/68 ,  H01C7/008 ,  H01C7/1006 ,  H01C7/18 ,  H01C17/06533 ,  H01G4/1218 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/1245 ,  H01G4/14 ,  H01G4/232 ,  H01G4/248

摘要： A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

公开(公告)号：US20150187451A1

公开(公告)日：2015-07-02

申请号：US14488999

申请日：2014-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeon Cheol PARK ,  Kwang Hee KIM ,  Chan KWAK ,  Yoon Chul SON ,  Sang Mock LEE

IPC分类号： H01B1/02 ,  H01B13/00 ,  C23C14/00

CPC分类号： C23C14/0036 ,  C23C14/024 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/086 ,  G06F3/041 ,  G06F2203/04103 ,  H01B1/00 ,  H01B1/08 ,  H01L31/022466 ,  Y10T428/265

摘要： Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.

摘要翻译： 公开了一种复合透明电极及其制造方法及包括该复合透明电极的电子器件，其中复合透明电极包括含有铟（In），钛（Ti），锌（Zn）等）中的至少一种的金属氮化物薄膜， ，锆（Zr）和镓（Ga）以及包含铟（In），锌（Zn），锡（Sn）和钛（Ti）中的至少一种的金属氧化物薄膜） 形成在金属氮化物薄膜的一个表面或相对表面上。

公开(公告)号：US20140199612A1

公开(公告)日：2014-07-17

申请号：US13974894

申请日：2013-08-23

申请人： Samsung Electronics Co., Ltd.

发明人： Ju-sik KIM ,  Dong-hee YEON ,  Chan KWAK ,  Doh-won JUNG

IPC分类号： H01M8/02

CPC分类号： H01M8/0282 ,  H01M2008/1293

摘要： A solid oxide fuel cell (“SOFC”) sealed with a multi-layered hybrid structure, the SOFC including: a cathode layer; a cathode current collector in contact with the cathode layer; an anode layer corresponding to the cathode layer; an anode current collector in contact with the anode layer; an electrolyte layer disposed between the cathode layer and the anode layer; a reaction barrier layer disposed between the electrolyte layer and the cathode layer; and at least two different types of sealing materials.

摘要翻译： 一种用多层混合结构密封的固体氧化物燃料电池（“SOFC”），该SOFC包括：阴极层; 与阴极层接触的阴极集电体; 对应于阴极层的阳极层; 与阳极层接触的阳极集电体; 设置在所述阴极层和所述阳极层之间的电解质层; 设置在电解质层和阴极层之间的反应阻挡层; 和至少两种不同类型的密封材料。

公开(公告)号：US20130295484A1

公开(公告)日：2013-11-07

申请号：US13864538

申请日：2013-04-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Soo-yeon SEO ,  Hee-jung PARK ,  Kyoung-seok MOON ,  Chan KWAK

IPC分类号： H01M4/90

CPC分类号： H01M4/9033 ,  H01M8/1231 ,  Y02P70/56

摘要： A material for a solid oxide fuel cell, the material including: a first metal oxide represented by Formula 1 and having a perovskite crystal structure; a second metal oxide having an electronic conductivity which is greater than an electrical conductivity of the first metal oxide, a thermal expansion coefficient which is less than a thermal expansion coefficient of the first metal oxide, and having a perovskite crystal structure; and a third metal oxide having a fluorite crystal structure: BaaSrbCoxFeyZ1-x-yO3-δ,  Formula 1 wherein Z is at least one element selected from an element of Groups 3 to 12 and a lanthanide element, a and b satisfy 0.4≦a≦0.6, 0.4≦b≦0.6, and a+b≦1, x and y satisfy 0.6≦x≦0.9, 0.1≦y≦0.4, and x+y

摘要翻译： 1.一种固体氧化物型燃料电池用材料，其特征在于，具有由式1表示的具有钙钛矿结晶结构的第一金属氧化物， 具有比第一金属氧化物的电导率大的电子导电性的第二金属氧化物，小于第一金属氧化物的热膨胀系数的热膨胀系数，并具有钙钛矿晶体结构的第二金属氧化物; 和具有萤石晶体结构的第三金属氧化物：BaaSrbCoxFeyZ1-x-yO3-δ，式1其中Z是选自第3〜12族元素中的至少一种元素和镧系元素，a和b满足0.4≤a@ 0.6，0.4 @ b @ 0.6和a + b @ 1，x和y满足0.6 @ x @ 0.9,0.1 @ y @ 0.4和x + y <1，并且选择δ，使得第一金属氧化物是静电的 中性。

公开(公告)号：US20200234888A1

公开(公告)日：2020-07-23

申请号：US16837019

申请日：2020-04-01

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Yoon Chul SON ,  Minoru OSADA ,  Takayoshi SASAKI ,  Chan KWAK ,  Doh Won JUNG ,  Youngjin CHO

IPC分类号： H01G4/33 ,  H01G4/248 ,  H01G4/012 ,  H01G4/12 ,  H01C7/10 ,  H01C7/00 ,  H01G4/30

摘要： A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.

公开(公告)号：US20190189345A1

公开(公告)日：2019-06-20

申请号：US16100285

申请日：2018-08-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyoung-Seok MOON ,  Hyeon Cheol PARK ,  Chan KWAK ,  Hyun Sik KIM ,  Daejin YANG ,  Youngjin CHO

IPC分类号： H01G4/12 ,  H01G4/30 ,  H01G4/008

CPC分类号： H01G4/1227 ,  H01G4/008 ,  H01G4/30

摘要： A ceramic dielectric includes a plurality of semi-conductive grains including a semiconductor oxide including barium (Ba), titanium (Ti), and a rare earth element. A ceramic dielectric also includes an insulative oxide located between adjacent semiconductor grains and an acceptor element including manganese (Mn), magnesium (Mg), aluminum (Al), iron (Fe), scandium (Sc), gallium (Ga), or a combination thereof, a method of manufacturing the ceramic dielectric, and a ceramic electronic component, and an electronic device including the ceramic dielectric.