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公开(公告)号:US20250014957A1
公开(公告)日:2025-01-09
申请号:US18762040
申请日:2024-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jingu KIM , Gongje LEE , Yongjun LEE
IPC: H01L23/31 , H01L23/00 , H01L23/14 , H01L23/26 , H01L23/29 , H01L23/49 , H01L23/498 , H01L25/00 , H01L25/10
Abstract: A semiconductor package includes: a first redistribution structure including a first redistribution pattern and a first redistribution insulating layer at least partially surrounding the first redistribution pattern; a first semiconductor chip disposed on the first redistribution structure; a first molding member at least partially surrounding the first semiconductor chip and the first redistribution structure; a conductive pillar passing through the first molding member; a second redistribution structure disposed on the first molding member and including a second redistribution pattern and a second redistribution insulating layer at least partially surrounding the second redistribution pattern; a second semiconductor chip disposed on the second redistribution structure; and a second molding member at least partially surrounding the second semiconductor chip and the second redistribution structure.
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公开(公告)号:US20230154525A1
公开(公告)日:2023-05-18
申请号:US17986556
申请日:2022-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungseuk KIM , Yongjun LEE
IPC: G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C29/52
CPC classification number: G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C29/52
Abstract: A storage device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines; a physical unclonable function (PUF) circuit configured to output PUF data based on a voltage difference between two memory cells from among the plurality of memory cells, the two memory cells being connected to a word line from among the plurality of word lines and two bit lines from among the plurality of bit lines, and to which a same data are programmed; and a memory controller configured to receive the PUF data from the PUF circuit, and program the PUF data or an inverted value of the PUF data to one of the two memory cells based on a value of the PUF data.
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