公开(公告)号：US10217746B1

公开(公告)日：2019-02-26

申请号：US15867881

申请日：2018-01-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tae-Kyung Kim ,  Raghuveer S. Makala ,  Yanli Zhang ,  Hiroyuki Kinoshita ,  Daxin Mao ,  Jixin Yu ,  Yiyang Gong ,  Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi

IPC: H01L27/105 ,  H01L21/768 ,  H01L27/24 ,  H01L23/535 ,  H01L45/00

Abstract: A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a top surface of a substrate, such that each of the first insulating layers and the first electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the first alternating stack that includes the horizontally-extending portions of the first electrically conductive layers, such that each of the memory stack structures comprises a memory film and a vertical semiconductor channel, a mesa structure located over the substrate, such that each respective non-horizontally-extending portion of the first insulating layers and the first electrically conductive layers is located over a sidewall of the mesa structure, and contact structures that contact a respective one of the non-horizontally-extending portions of the first electrically conductive layers.