公开(公告)号：US10217746B1

公开(公告)日：2019-02-26

申请号：US15867881

申请日：2018-01-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tae-Kyung Kim ,  Raghuveer S. Makala ,  Yanli Zhang ,  Hiroyuki Kinoshita ,  Daxin Mao ,  Jixin Yu ,  Yiyang Gong ,  Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi

IPC: H01L27/105 ,  H01L21/768 ,  H01L27/24 ,  H01L23/535 ,  H01L45/00

Abstract: A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a top surface of a substrate, such that each of the first insulating layers and the first electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the first alternating stack that includes the horizontally-extending portions of the first electrically conductive layers, such that each of the memory stack structures comprises a memory film and a vertical semiconductor channel, a mesa structure located over the substrate, such that each respective non-horizontally-extending portion of the first insulating layers and the first electrically conductive layers is located over a sidewall of the mesa structure, and contact structures that contact a respective one of the non-horizontally-extending portions of the first electrically conductive layers.

公开(公告)号：US09905573B1

公开(公告)日：2018-02-27

申请号：US15251374

申请日：2016-08-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shogo Mada ,  Akira Takahashi ,  Motoki Umeyama

IPC: H01L27/115 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L23/535

CPC classification number: H01L27/11582 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11573

Abstract: A mesa structure is formed over peripheral devices on a substrate. An alternating stack of insulating layers and spacer material layers is formed over the substrate and the mesa structure. A region of the alternating stack overlying the mesa structure is removed to provide a region in which the layers in the alternating stack extend along a non-horizontal direction that is parallel to the dielectric sidewall of the mesa structure. Memory stack structures and backside contact via structures are formed through another region of the alternating stack that includes horizontally-extending portions of the layers within the alternating stack. The spacer material layers are provided as, or are replaced with, electrically conductive layers. Top surfaces of portions of the electrically conductive layers that extend parallel to the dielectric sidewall of the mesa structure can be contacted by word line contact via structures.

公开(公告)号：US10211215B1

公开(公告)日：2019-02-19

申请号：US15895102

申请日：2018-02-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yashushi Ishii ,  Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi ,  Tae-Kyung Kim

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L27/11597 ,  H01L27/28 ,  H01L27/11529 ,  H01L27/105 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11514 ,  H01L45/00

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a substrate. Each of the first insulating layers and the first sacrificial material layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion. Memory stack structures are formed through the horizontally-extending portions of the alternating stack. Regions of the non-horizontally-extending portions of the sacrificial material layers are masked with patterned etch mask portions. Unmasked first regions of the non-horizontally-extending portions of the first sacrificial material layers are selectively recessed, and the sacrificial material layers with electrically conductive layers. Each electrically conductive layer can include a vertical plate region and a protrusion region that protrudes above the vertical plate region and having a narrower lateral dimension that the vertical plate region. Metal contact structures can be formed on the protrusion regions without contacting the vertical plate regions.

公开(公告)号：US10181442B1

公开(公告)日：2019-01-15

申请号：US15826796

申请日：2017-11-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11529 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L21/768 ,  H01L23/522 ,  H01L21/28 ,  H01L27/11514 ,  H01L27/06 ,  H01L27/11578

Abstract: A three-dimensional memory device includes an alternating stack of L-shaped insulating layers and L-shaped electrically conductive layers located over a top surface of a substrate, such that each of the L-shaped insulating layers and the L-shaped electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the alternating stack that includes the horizontally-extending portions of the L-shaped electrically conductive layers, such that each of the memory stack structures includes a memory film and a vertical semiconductor channel, dielectric spacers non-horizontally extending between neighboring pairs of a non-horizontally-extending portion of an L-shaped insulating layer and a non-horizontally-extending portion of an L-shaped electrically conductive layer, and contact via structures that contact a respective one of the non-horizontally-extending portions of the L-shaped electrically conductive layers.