SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20220406571A1

    公开(公告)日:2022-12-22

    申请号:US17842222

    申请日:2022-06-16

    Abstract: Disclosed is a substrate treating apparatus, including: a process chamber in which an inner space for treating a substrate is formed; an ion blocker for dividing the inner space into a plasma generating space and a treatment space; a substrate support unit for supporting a substrate in the treatment space; an exhaust unit for exhausting the treatment space; an anneal source positioned above the ion blocker and transmitting energy for annealing to the substrate through the ion blocker; and a gas supply unit for supplying process gas to the plasma generating space, in which the ion blocker includes: a body which is shaped like a disk, is made of a material through which microwaves are transmittable, and is formed with a plurality of through-holes; and a transparent conductive oxide film provided on at least one of an upper surface and a lower surface of the body in a first thickness or less.

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