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公开(公告)号：US20240414919A1
公开(公告)日：2024-12-12
申请号：US18615692
申请日：2024-03-25
Inventor： Sung Min CHOI , Heeyeop CHAE , Hojin KANG , Hyeongwu LEE , Heeju HA
Abstract: Proposed are a substrate processing method and a substrate processing apparatus. A substrate processing method according to an embodiment is for etching a thin film formed on a substrate at the atomic layer level, and includes a surface modification step of modifying a surface of the thin film by supplying a first gas including oxygen (O) to a processing space of a chamber in which the substrate is placed, a first purge step of removing the first gas remaining in the processing space by supplying a purge gas to the processing space, an etching step of etching the modified thin film by supplying a CHF3 gas to the processing space, and a second purge step of removing the CHF3 gas remaining in the processing space by supplying the purge gas to the processing space.
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公开(公告)号：US20230064390A1
公开(公告)日：2023-03-02
申请号：US17895540
申请日：2022-08-25
Applicant: SEMES CO., LTD.
Inventor： Min Sung JEON , Yun Sang KIM , Sung Min CHOI , Dong Young JANG , Ji Heon KIM , Young Jo JIN
IPC: H01J37/32
Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.
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3.发明申请公开(公告)号：US20240412989A1
公开(公告)日：2024-12-12
申请号：US18737916
申请日：2024-06-07
Applicant: SEMES CO., LTD.
Inventor： Young Eun JEON , Jong Won PARK , Sung Min CHOI , Woo Nam CHOI , Kun Hee KO , Yu Jung PARK , Jung Min SIM
IPC: H01L21/67 , H01J37/32 , H01L21/324 , H01L21/687
Abstract: Proposed are thermal processing apparatus, thermal processing method, and substrate treatment equipment, in which particle generation and damage to a substrate in the cooling process of the substrate can be prevented. The thermal processing apparatus includes a chamber having a processing zone therein, a plurality of chuck pins configured to support a substrate and move up or down individually, a heater configured to provide heat energy to the processing zone, a fluid supply port configured to supply a fluid to the processing zone, a fluid discharge port configured to discharge the fluid remaining in the processing zone to the outside, and a controller configured to control a treatment process of the substrate.
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公开(公告)号：US20230154730A1
公开(公告)日：2023-05-18
申请号：US17865395
申请日：2022-07-15
Applicant: SEMES CO., LTD.
Inventor： Young Eun JEON , Yun Sang KIM , Min Sung JEON , Ji Heon KIM , Youngjo JIN , Jin Hee HONG , Sung Min CHOI , Dong Young JANG
IPC: H01J37/32 , H01L27/11582
CPC classification number: H01J37/3244 , H01J37/32522 , H01L27/11582 , H01J2237/334 , H01J2237/022
Abstract: A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.
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Patent Agency Ranking
公开(公告)号：US20220285139A1
公开(公告)日：2022-09-08
申请号：US17682029
申请日：2022-02-28
Applicant: SEMES CO., LTD.
Inventor： Jung Hoon PARK , Yun Sang KIM , Min Sung JEON , Soon-Cheon CHO , Sung Min CHOI , Jin Hee HONG
IPC: H01J37/32
Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a chamber having a treating space therein; a support unit placed within the treating space and supporting a substrate; and a plasma generating unit for generating a plasma from a process gas supplied to the treating space, and wherein the plasma generating unit comprising: a first electrode; and a second electrode facing the first electrode, the second electrode made of a material capable of transmitting electromagnetic waves.
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公开(公告)号：US20240410057A1
公开(公告)日：2024-12-12
申请号：US18615556
申请日：2024-03-25
Inventor： Sung Min CHOI , Heeyeop CHAE , Hojin KANG , Hyeongwu LEE , Heeju HA
Abstract: Proposed are a substrate processing method and a substrate processing apparatus. A substrate processing method according to an embodiment is for etching a thin film formed on a substrate at the atomic layer level, and includes a surface modification step of modifying a surface of the thin film by supplying a first gas including chlorine (Cl) to a processing space of a chamber in which the substrate is placed, a first purge step of removing the first gas remaining in the processing space by supplying a purge gas to the processing space, an etching step of etching the modified thin film by supplying a second gas including acetylacetone (Hacac) to the processing space, and a second purge step of removing the second gas remaining in the processing space by supplying the purge gas to the processing space.
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公开(公告)号：US20240222171A1
公开(公告)日：2024-07-04
申请号：US18542665
申请日：2023-12-16
Applicant: SEMES CO., LTD.
Inventor： Young Eun JEON , Yun Sang KIM , Min Sung JEON , Tae Hwan LEE , Sung Min CHOI , Jin Hee HONG , Dong Young JANG , Young Jo JIN
CPC classification number: H01L21/67276 , H01J37/3244 , H01J37/32495 , H01L21/67098 , H01L21/67213 , H01J2237/002 , H01J2237/334
Abstract: Proposed are a substrate treatment system and a substrate treatment method. More particularly, a technology capable of realizing a fine etching adjustment and capable of increasing a Unit Per Equipment Hour (UPEH) by reducing time required for a process is provided.
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公开(公告)号：US20240063025A1
公开(公告)日：2024-02-22
申请号：US18213894
申请日：2023-06-26
Applicant: SEMES CO., LTD.
Inventor： Jin Hee HONG , Yun Sang KIM , Min Sung JEON , Young Eun JEON , Sung Min CHOI , Young Jo JIN , Dong Young JANG
IPC: H01L21/311 , H01L21/67
CPC classification number: H01L21/31116 , H01L21/67069
Abstract: A sacrificial passivation film deposition method according to an exemplary embodiment of the present disclosure may include: depositing a primary sacrificial passivation film on an entire surface of a substrate using a thermal ALD (T-ALD) process; and additionally depositing a secondary sacrificial passivation film on an upper surface and at least a portion of a side surface of an upper portion of the primary sacrificial passivation film using a plasma-ALD (P-ALD) process.
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公开(公告)号：US20230060210A1
公开(公告)日：2023-03-02
申请号：US17894374
申请日：2022-08-24
Applicant: SEMES CO., LTD.
Inventor： Min Sung JEON , Yun Sang KIM , Sung Min CHOI , Dong Young JANG
IPC: H01J37/32
Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member and a top electrode member disposed opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode pattern on the first plate and having a pattern.
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