ANTENNA MEMBER AND APPARATUS AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20230411117A1

    公开(公告)日:2023-12-21

    申请号:US18097232

    申请日:2023-01-14

    CPC classification number: H01J37/3211 H01J37/3244 H01J37/32119

    Abstract: An antenna member includes a first coil and a second coil that are rotationally symmetrical with each other, wherein the first coil includes a first supply terminal to which current is applied, a first ground terminal connected to a ground, and a first shunt capacitor shunted between the first supply terminal and the first ground terminal, the second coil includes a second supply terminal to which current is applied, a second ground terminal connected to the ground, and a second shunt capacitor shunted between the second supply terminal and the second ground terminal, the first coil includes an arc-shaped first portion and an arc-shaped second portion, and the first portion and the second portion form a one-turn winding as a whole, the second coil includes an arc-shaped first portion and an arc-shaped second portion, and the first portion and the second portion form a one-turn winding as a whole, the second portion has a height lower than a height of the first portion, the second portion of the second coil is disposed below the first portion of the first coil, and the second portion of the first coil is disposed below the first portion of the second coil.

    APPARATUS FOR TREATING SUBSTRATE
    5.
    发明公开

    公开(公告)号:US20230207272A1

    公开(公告)日:2023-06-29

    申请号:US18056046

    申请日:2022-11-16

    CPC classification number: H01J37/32201 H01J37/3244 H01J37/32229

    Abstract: An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.

    THERMAL PROCESSING APPARATUS USING MICROWAVE AND OPERATION METHOD THEREOF

    公开(公告)号:US20240107639A1

    公开(公告)日:2024-03-28

    申请号:US18203669

    申请日:2023-05-31

    CPC classification number: H05B6/80 H05B6/6455 H05B6/78 H05B6/707

    Abstract: An embodiment of the present disclosure provides a thermal processing apparatus and an operation method thereof capable of controlling a heat distribution of a substrate at a low cost in a thermal processing process using a microwave. According to the present disclosure, a thermal processing apparatus includes a chamber that forms a thermal processing space of a substrate, a substrate support unit that is located at a lower portion of the thermal processing space and supports the substrate, and a microwave unit that is located at an upper portion of the thermal processing space and forms an electromagnetic field by the microwave in the thermal processing space. The substrate support unit includes a chuck fixed at the lower portion of the thermal processing space, a lifting drive mechanism configured to support the substrate with raising and lowering the substrate with respect to the chuck, and a controller that controls the lifting drive mechanism to adjust a height of the substrate based on a temperature distribution for each area of the substrate.

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