公开(公告)号：US20250149312A1

公开(公告)日：2025-05-08

申请号：US18939452

申请日：2024-11-06

Applicant: SEMES CO., LTD.

Inventor： Tae Sung KIM ,  Duk Hyun SON

IPC: H01J37/32 ,  G05D7/06 ,  H01L21/683

Abstract: Disclosed are a substrate processing apparatus including a fluid supply unit and a fluid control method for controlling a flow rate of fluid. The fluid control method for controlling a flow rate of fluid to be supplied to a lower surface of a substrate from a fluid supply unit including a fluid source for supplying fluid and fluid supply lines connected to the fluid source includes a dimension measurement step of measuring lengths and cross-sectional areas of the fluid supply lines, a volume calculation step of calculating volumes of the fluid supply lines using the lengths and the cross-sectional areas measured in the dimension measurement step, a time measurement step of opening a valve provided in the fluid source to measure a time for which fluid is supplied to the fluid supply lines, and a control step of controlling a flow rate of fluid based on data obtained in the previous steps.

公开(公告)号：US20250029851A1

公开(公告)日：2025-01-23

申请号：US18607481

申请日：2024-03-17

Applicant: SEMES CO., LTD.

Inventor： Tae Sung KIM ,  Duk Hyun SON ,  Kwang Pyo LEE

IPC: H01L21/67 ,  B08B9/032

Abstract: Proposed are a substrate processing system and a process gas supply control verification method and, more particularly, to a technology to verify the operation of a mass flow controller (MFC) that supplies a process gas for semiconductor processing at an appropriate flow rate according to a recipe.

公开(公告)号：US20240203696A1

公开(公告)日：2024-06-20

申请号：US18387655

申请日：2023-11-07

Applicant: SEMES CO., LTD.

Inventor： Tae Sung KIM ,  Duk Hyun SON

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: The substrate processing device includes a chamber in which a processing space for processing a substrate is formed, a substrate support unit supporting the substrate in the processing space, a gas supply portion supplying process gas to the processing space, a gas supply unit supplying gas to the gas supply portion, and a controller connected to the gas supply unit, wherein the gas supply unit includes a flow control valve controlling a flow rate of the process gas supplied through a gas supply line, and the controller controls, during a first time, the flow control valve to alternately provide supply of a flow rate greater than an average flow rate for the first time and supply of a flow rate less than the average flow rate.