公开(公告)号：US20210098653A1

公开(公告)日：2021-04-01

申请号：US17118731

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H01L51/10

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US20210005787A1

公开(公告)日：2021-01-07

申请号：US17025273

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H01L51/10

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US20230361250A1

公开(公告)日：2023-11-09

申请号：US18224330

申请日：2023-07-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H10K10/84

CPC classification number: H01L33/405 ,  H01S5/125 ,  H10K10/84

Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first insulating reflection layer covers at least a portion of the light emitter emitting structure, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.