公开(公告)号：US20230361250A1

公开(公告)日：2023-11-09

申请号：US18224330

申请日：2023-07-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H10K10/84

CPC classification number: H01L33/405 ,  H01S5/125 ,  H10K10/84

Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first insulating reflection layer covers at least a portion of the light emitter emitting structure, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.

公开(公告)号：US20170108937A1

公开(公告)日：2017-04-20

申请号：US15279549

申请日：2016-09-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Won WOO ,  Ji Hye KIM

IPC: G06F3/02 ,  H01H13/83 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: G06F3/0202 ,  G06F1/1662 ,  H01H13/83 ,  H01H2219/036 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46

Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

公开(公告)号：US20210359188A1

公开(公告)日：2021-11-18

申请号：US17389025

申请日：2021-07-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/62 ,  H01L33/46 ,  H01L27/15 ,  H01L33/10

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US20210098653A1

公开(公告)日：2021-04-01

申请号：US17118731

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H01L51/10

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US20210005787A1

公开(公告)日：2021-01-07

申请号：US17025273

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H01L51/10

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US20170301826A1

公开(公告)日：2017-10-19

申请号：US15490492

申请日：2017-04-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Keum Ju LEE ,  Seom Geun LEE ,  Kyoung Wan KIM ,  Yong Woo RYU ,  Mi Na JANG

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/10 ,  H01L33/06 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L33/145 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

公开(公告)号：US20140209966A1

公开(公告)日：2014-07-31

申请号：US14231043

申请日：2014-03-31

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol SEO ,  Dae Sung CHO ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC: H01L33/62 ,  H01L33/42

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，第一导电类型半导体层 电连接到第一导电型半导体层的电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极焊盘之间的绝缘层，以及至少一个电连接 到所述第二电极焊盘，所述至少一个上延伸部电连接到所述第二导电型半导体层。

公开(公告)号：US20190165208A1

公开(公告)日：2019-05-30

申请号：US16264866

申请日：2019-02-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ji Hye KIM ,  Kyoung Wan KIM ,  Ye Seul KIM

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/62 ,  H01L33/20 ,  H01L33/46 ,  H01L33/38

Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.

公开(公告)号：US20190123244A1

公开(公告)日：2019-04-25

申请号：US16218042

申请日：2018-12-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Sang Won WOO ,  Ji Hye KIM

IPC: H01L33/44 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

公开(公告)号：US20170012173A1

公开(公告)日：2017-01-12

申请号：US15273265

申请日：2016-09-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Sum Geun LEE ,  Jin Cheol SHIN ,  Yeo Jin YOON ,  Kyoung Wan KIM ,  Jeong Hee YANG

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.

Abstract translation: 发光二极管包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层 半导体层，电连接到第一导电类型半导体层的第一电极焊盘，电连接到第二导电类型半导体层的第二电极焊盘，以及设置在第二电极焊盘下方的绝缘层。 绝缘层与第一导电类型半导体层和第二导电类型半导体层重叠。 绝缘层与第一导电类型半导体层的边缘齐平，第二电极焊盘与第一导电类型半导体层的边缘间隔开。