公开(公告)号：US20230317763A1

公开(公告)日：2023-10-05

申请号：US18040904

申请日：2021-08-09

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Wan Tae LIM ,  Sang Won WOO

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.

公开(公告)号：US20190067526A1

公开(公告)日：2019-02-28

申请号：US15767284

申请日：2016-06-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul KIM ,  Sang Won WOO ,  Kyoung Wan KIM

IPC: H01L33/46

Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25λ+10%, in a range of 0.25λ−10% to 0.25λ+10%, and less than 0.25λ−10%, respectively. With respect to a central wavelength (λ: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

公开(公告)号：US20230361250A1

公开(公告)日：2023-11-09

申请号：US18224330

申请日：2023-07-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H10K10/84

CPC classification number: H01L33/405 ,  H01S5/125 ,  H10K10/84

Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first insulating reflection layer covers at least a portion of the light emitter emitting structure, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.

公开(公告)号：US20170108937A1

公开(公告)日：2017-04-20

申请号：US15279549

申请日：2016-09-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Won WOO ,  Ji Hye KIM

IPC: G06F3/02 ,  H01H13/83 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: G06F3/0202 ,  G06F1/1662 ,  H01H13/83 ,  H01H2219/036 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46

Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

公开(公告)号：US20210098653A1

公开(公告)日：2021-04-01

申请号：US17118731

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H01L51/10

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US20210005787A1

公开(公告)日：2021-01-07

申请号：US17025273

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Tae Jun PARK ,  Sang Won WOO

IPC: H01L33/40 ,  H01S5/125 ,  H01L51/10

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US20230215990A1

公开(公告)日：2023-07-06

申请号：US18169499

申请日：2023-02-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Sang Won WOO ,  Wan Tae LIM

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/42

Abstract: A light emitting diode is provided to include a substrate; a light emitting structure disposed on the substrate, and including first and second semiconductor layers; a transparent electrode in ohmic contact with the second semiconductor layer; a contact electrode disposed on the first semiconductor layer; a current spreader disposed on the transparent electrode; a first insulation reflection layer covering the substrate, the light emitting structure, the transparent electrode, the contact electrode, and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector; first and second pad electrodes disposed on the first insulation reflection layer and connected to the contact electrode and the current spreader through the openings; and a second insulation reflection layer disposed under the substrate and including a distributed Bragg reflector.

公开(公告)号：US20190123244A1

公开(公告)日：2019-04-25

申请号：US16218042

申请日：2018-12-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Sang Won WOO ,  Ji Hye KIM

IPC: H01L33/44 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.