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公开(公告)号：US20230361250A1
公开(公告)日：2023-11-09
申请号：US18224330
申请日：2023-07-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Tae Jun PARK , Sang Won WOO
CPC classification number: H01L33/405 , H01S5/125 , H10K10/84
Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first insulating reflection layer covers at least a portion of the light emitter emitting structure, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.
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公开(公告)号：US20170200857A1
公开(公告)日：2017-07-13
申请号：US15469253
申请日：2017-03-24
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
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公开(公告)号：US20210098653A1
公开(公告)日：2021-04-01
申请号：US17118731
申请日：2020-12-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Tae Jun PARK , Sang Won WOO
Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
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公开(公告)号：US20210005787A1
公开(公告)日：2021-01-07
申请号：US17025273
申请日：2020-09-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Tae Jun PARK , Sang Won WOO
Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
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公开(公告)号：US20190157506A1
公开(公告)日：2019-05-23
申请号：US16259478
申请日：2019-01-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi KIM , Jin Woong LEE , Yeo Jin YOON , Seom Geun LEE , Yong Woo RYU , Keum Ju Lee
Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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Patent Agency Ranking
公开(公告)号：US20150255679A1
公开(公告)日：2015-09-10
申请号：US14721224
申请日：2015-05-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Tae Kyoon KIM
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: A light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 1.一种发光二极管（LED），包括包括第一半导体层，有源层和第二半导体层的半导体堆叠结构，设置在基板上的半导体堆叠，设置在半导体堆叠结构上的导电基板和电极 设置在导电衬底上并与导电衬底欧姆接触，其中电极包括穿透电极的沟槽和导电衬底的一部分。
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公开(公告)号：US20180153007A1
公开(公告)日：2018-05-31
申请号：US15579370
申请日：2016-05-18
Applicant: Seoul Viosys Co., Ltd
Inventor： Mae Yi KIM , Seom Geun LEE , Yeo Jin YOON , Jin Woong LEE , Yong Woo RYU
CPC classification number: H05B33/0803 , H01L33/14 , H01L33/36 , H01L33/382
Abstract: A light emitting diode including a first semiconductor layer and a plurality of mesas including a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer including an exposed region between the plurality of mesas, a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region, a transparent electrode layer covering the second semiconductor layer and the current blocking layer, and a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second semiconductor layer. The current blocking layer includes a connecting portion extending from a first mesa to a second mesa adjacent to the first mesa and a protruding portion protruding from the connecting portion and disposed on the exposed region.
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公开(公告)号：US20140159089A1
公开(公告)日：2014-06-12
申请号：US14098687
申请日：2013-12-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Tae Kyoon KIM
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 本发明的示例性实施例公开了一种包括半导体堆叠结构的发光二极管（LED），其包括第一半导体层，有源层和第二半导体层，设置在基板上的半导体堆叠， 半导体堆叠结构，以及设置在导电衬底上并与导电衬底欧姆接触的电极，其中电极包括穿透电极和导电衬底的一部分的沟槽。
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公开(公告)号：US20140117395A1
公开(公告)日：2014-05-01
申请号：US14067455
申请日：2013-10-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seoul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。
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公开(公告)号：US20200176641A1
公开(公告)日：2020-06-04
申请号：US16705770
申请日：2019-12-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Chan Seob SHIN , Myeong Hak YANG , Jin Woong LEE
IPC: H01L33/40 , H01L33/62 , H01L25/075
Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.
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