公开(公告)号：US10111313B2

公开(公告)日：2018-10-23

申请号：US13847130

申请日：2013-03-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takeharu Motokawa ,  Tokuhisa Ooiwa ,  Kensuke Demura ,  Tomoaki Yoshimori ,  Makoto Karyu ,  Yoshihisa Kase ,  Hidehito Azumano

IPC: H01L21/00 ,  C23C16/00 ,  H05H1/46 ,  H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.