公开(公告)号：US12109597B2

公开(公告)日：2024-10-08

申请号：US17230152

申请日：2021-04-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Daisuke Matsushima ,  Kensuke Demura ,  Satoshi Nakamura ,  Masaya Kamiya ,  Minami Nakamura

IPC: B08B7/00 ,  B08B3/04 ,  B08B3/08 ,  B08B3/10 ,  F25C1/12 ,  H01L21/67

CPC classification number: B08B7/0014 ,  B08B3/041 ,  B08B3/08 ,  B08B3/10 ,  F25C1/12 ,  H01L21/67028

Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate the substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a first liquid supplier configured to supply a first liquid on a surface of the substrate, a second liquid supplier configured to supply a second liquid on the surface, and a controller controlling rotation of the substrate, supply of the cooling gas, the first and second liquids. The controller performs a preliminary process of supplying the second liquid on the surface, and supplying the cooling gas into the space, a liquid film forming process by supplying the first liquid toward the surface after the preliminary process, a supercooling process of the liquid film on the surface, and a freezing process of at least a part of the liquid film on the surface.

公开(公告)号：US08999612B2

公开(公告)日：2015-04-07

申请号：US13850515

申请日：2013-03-26

Applicant: Shibaura Mechatronics Corporation

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract translation: 根据一个实施例，一种用于制造反射掩模的方法包括：在基板的主表面上形成反射层; 在反射层上形成含有钌的覆盖层; 在覆盖层上形成吸收层; 在吸收层中形成图案区域; 去除用于形成图案区域的第一抗蚀剂掩模; 以及在吸收层，封盖层和反射层中形成围绕图案区域的遮光区域。 去除形成图案区域中使用的第一抗蚀剂掩模包括：使用氨气和氮气的混合气体或仅仅氨气进行干灰化处理。

公开(公告)号：US11355337B2

公开(公告)日：2022-06-07

申请号：US16916288

申请日：2020-06-30

Applicant: Shibaura Mechatronics Corporation

Inventor： Masaya Kamiya ,  Kensuke Demura ,  Daisuke Matsushima ,  Haruka Nakano ,  Ivan Petrov Ganachev

IPC: H01L21/02 ,  G03F7/40 ,  G03F7/42 ,  B08B3/10 ,  B08B7/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/66

Abstract: A substrate treatment device according to an embodiment includes a placement portion on which a substrate is placed and rotated, a liquid supply portion which supplies a liquid to a surface on an opposite side to the placement portion of the substrate, a cooling portion which supplies a cooling gas to a surface on a side of the placement portion of the substrate, and a control portion which controls at least one of a rotation speed of the substrate, a supply amount of the liquid, and a flow rate of the cooling gas. The control portion brings the liquid present on a surface of the substrate into a supercooled state and causes at least a part of the liquid brought into the supercooled state to freeze.

公开(公告)号：US20200335324A1

公开(公告)日：2020-10-22

申请号：US16916288

申请日：2020-06-30

Applicant: Shibaura Mechatronics Corporation

Inventor： Masaya Kamiya ,  Kensuke Demura ,  Daisuke Matsushima ,  Haruka Nakano ,  Ivan Petrov Ganachev

IPC: H01L21/02 ,  G03F7/40 ,  G03F7/42 ,  B08B3/10 ,  B08B7/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/66

Abstract: A substrate treatment device according to an embodiment includes a placement portion on which a substrate is placed and rotated, a liquid supply portion which supplies a liquid to a surface on an opposite side to the placement portion of the substrate, a cooling portion which supplies a cooling gas to a surface on a side of the placement portion of the substrate, and a control portion which controls at least one of a rotation speed of the substrate, a supply amount of the liquid, and a flow rate of the cooling gas. The control portion brings the liquid present on a surface of the substrate into a supercooled state and causes at least a part of the liquid brought into the supercooled state to freeze.

公开(公告)号：US20130260292A1

公开(公告)日：2013-10-03

申请号：US13850515

申请日：2013-03-26

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F1/24

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

公开(公告)号：US12278120B2

公开(公告)日：2025-04-15

申请号：US17704135

申请日：2022-03-25

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Minami Nakamura ,  Kensuke Demura

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate treatment device includes a placement platform rotating a substrate, a cooling part supplying a cooling gas to a space between the placement platform and the substrate, a liquid supplier supplying a liquid to a surface of the substrate opposite to the placement platform side, a detector that is above the surface of the substrate and detects a freezing start of the liquid, and a controller controlling the substrate rotation, the cooling gas supply, and the liquid supply. The controller controls at least one of the substrate rotation, the cooling gas flow rate, or the liquid supply rate, and causes the liquid on the substrate surface to reach a supercooled state; and when determining based on a signal from the detector that the freezing of the supercooled liquid has started, the controller starts thawing the frozen liquid after a prescribed interval has elapsed from the freezing start of the liquid.

公开(公告)号：US12005482B2

公开(公告)日：2024-06-11

申请号：US17195924

申请日：2021-03-09

Applicant: Shibaura Mechatronics Corporation

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: H01L21/67 ,  B08B3/10 ,  B08B7/00

CPC classification number: B08B7/0092 ,  B08B3/10 ,  H01L21/67051

Abstract: According to one embodiment, q substrate treatment device includes a placement stand, a plurality of support portions, a cooling part, a liquid supplier, and at least one protrusion. The placement stand has a plate shape, and is configured to rotate. The support portions are provided on one surface of the placement stand and configured to support a substrate. The cooling part is configured to supply a cooling gas into a space between the placement stand and a back surface of the substrate supported by the support portions. The liquid supplier is configured to supply a liquid onto a surface of the substrate. At least one protrusion is provided on the one surface of the placement stand and extends along a boundary line of a region where the substrate is provided in a plan view.

公开(公告)号：US11784040B2

公开(公告)日：2023-10-10

申请号：US17181264

申请日：2021-02-22

Applicant: Shibaura Mechatronics Corporation

Inventor： Kensuke Demura ,  Daisuke Matsushima ,  Masaya Kamiya

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01L21/02057 ,  B08B7/0092 ,  H01L21/02052 ,  H01L21/67023

Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.

公开(公告)号：US11609491B2

公开(公告)日：2023-03-21

申请号：US16715044

申请日：2019-12-16

Applicant: Shibaura Mechatronics Corporation

Inventor： Daisuke Matsushima ,  Kensuke Demura ,  Masafumi Suzuki ,  Satoshi Nakamura

IPC: G03F1/24 ,  G03F1/82 ,  B08B7/00

Abstract: A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.
A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.

公开(公告)号：US20170017151A1

公开(公告)日：2017-01-19

申请号：US15124409

申请日：2015-02-19

Applicant: Shibaura Mechatronics Corporation

Inventor： Daisuke Matsushima ,  Kensuke Demura ,  Masafumi Suzuki ,  Satoshi Nakamura

IPC: G03F1/82 ,  B08B7/00 ,  G03F1/24

CPC classification number: G03F1/82 ,  B08B7/0035 ,  G03F1/24

Abstract: A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.

Abstract translation: 根据替代实施例的反射掩模清洁装置包括第三供应部分，其构造成将由还原气体产生的等离子体产物供应到设置在反射掩模中的含钌覆盖层; 以及第二供给部，其构造成向所述封盖层供给还原溶液和无氧溶液中的至少一种。