公开(公告)号：US20210074530A1

公开(公告)日：2021-03-11

申请号：US17009921

申请日：2020-09-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Hidehito Azumano

IPC: H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber configured to maintain an atmosphere depressurized below atmospheric pressure, a gas supply part configured to supply a gas into the chamber, a placement part provided inside the chamber, and configured to place a processed product, a depressurization part configured to depressurize inside the chamber, a window provided in the chamber, and facing the placement part, a plasma generator provided outside the chamber and on a surface of the window on an opposite side to the placement part, and configured to generate plasma inside the chamber, an optical path changing part provided inside the window and having a surface tilted to a central axis of the chamber, and a detection part provided on a side surface side of the window, and facing the surface of the optical path changing part.

公开(公告)号：US10111313B2

公开(公告)日：2018-10-23

申请号：US13847130

申请日：2013-03-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takeharu Motokawa ,  Tokuhisa Ooiwa ,  Kensuke Demura ,  Tomoaki Yoshimori ,  Makoto Karyu ,  Yoshihisa Kase ,  Hidehito Azumano

IPC: H01L21/00 ,  C23C16/00 ,  H05H1/46 ,  H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

公开(公告)号：US11387082B2

公开(公告)日：2022-07-12

申请号：US16581886

申请日：2019-09-25

Applicant: Shibaura Mechatronics Corporation

Inventor： Hidehito Azumano

IPC: H01J37/32 ,  H01B1/02

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber being possible to maintain an atmosphere more depressurized than atmospheric pressure, a plasma generator generating a plasma inside the chamber, a gas supplier supplying a gas into the chamber, a placement part positioned below a plasma generation region and placing a processed product thereon, a depressurization part depressurizing the chamber, and a power supply electrically connected to an electrode provided on the placement part via a bus bar. The bus bar is formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the bus bar. The bus bar includes a first layer formed of copper and a second layer covering the first layer and formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the second layer.

公开(公告)号：US11437224B2

公开(公告)日：2022-09-06

申请号：US17009921

申请日：2020-09-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Hidehito Azumano

IPC: H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber configured to maintain an atmosphere depressurized below atmospheric pressure, a gas supply part configured to supply a gas into the chamber, a placement part provided inside the chamber, and configured to place a processed product, a depressurization part configured to depressurize inside the chamber, a window provided in the chamber, and facing the placement part, a plasma generator provided outside the chamber and on a surface of the window on an opposite side to the placement part, and configured to generate plasma inside the chamber, an optical path changing part provided inside the window and having a surface tilted to a central axis of the chamber, and a detection part provided on a side surface side of the window, and facing the surface of the optical path changing part.

公开(公告)号：US11387083B2

公开(公告)日：2022-07-12

申请号：US16581859

申请日：2019-09-25

Applicant: Shibaura Mechatronics Corporation

Inventor： Hidehito Azumano

IPC: H01J37/32 ,  H01L21/67

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber, a plasma generator, a gas supplier supplying, a placement part, a depressurization part, and a supporting part. The supporting part includes a mounting part positioned below the placement part and provided with the placement part, and a beam extending from a side surface of the chamber toward a center axis of the chamber. One end of the beam is connected to a side surface of the mounting part. The beam includes a space connected to an outside space of the chamber. A following formula is satisfied, t1>t2, when a thickness of a side portion on the placement part side of side portions of the beam is taken as t1, a thickness of a side portion on an opposite side of the placement part side of the beam is taken as t2.