公开(公告)号：US08698283B2

公开(公告)日：2014-04-15

申请号：US13626116

申请日：2012-09-25

Applicant: SK Hynix Inc.

Inventor： Min Suk Suh

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L25/0657 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/078 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K1/183 ,  H05K1/184 ,  H05K2201/092 ,  H05K2201/10674 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor package includes a substrate including a substrate body having a first face and a second face opposing the first face. A first through electrode passes through the substrate body between the first face and the second face. An insulation member is disposed over the first face; and a connection member having a first conductive unit disposed inside of the insulation member is electrically connected to the first through electrode, and a second conductive unit electrically connected to the first conductive unit is exposed at side faces of the insulation member. A semiconductor chip having third and fourth faces is disposed over the first face of the substrate body in a vertical direction. A second through electrode passes through the substrate body between the third and fourth faces and is electrically connected to the second conductive unit.

Abstract translation: 半导体封装包括：衬底，其包括具有第一面的衬底主体和与第一面相对的第二面。 第一穿透电极在第一面和第二面之间通过衬底本体。 绝缘构件设置在第一面上; 并且具有设置在所述绝缘构件内部的第一导电单元的连接构件与所述第一通孔电连接，并且与所述第一导电单元电连接的第二导电单元在所述绝缘构件的侧面露出。 具有第三和第四面的半导体芯片在垂直方向上设置在基板主体的第一面上。 第二穿透电极在第三和第四面之间通过衬底主体并且电连接到第二导电单元。