公开(公告)号：US20230420586A1

公开(公告)日：2023-12-28

申请号：US18342617

申请日：2023-06-27

Applicant: SLT Technologies, Inc.

Inventor： Islam SAYED ,  Sang Ho OH ,  Nathan YOUNG ,  Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/035236 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/02363 ,  H01L31/109 ,  H01L31/1848

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.