公开(公告)号：US09136113B2

公开(公告)日：2015-09-15

申请号：US14044846

申请日：2013-10-02

Applicant: SOITEC

Inventor： Didier Landru ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Christelle Veytizou

IPC: H01L21/461 ,  H01L21/02 ,  H01L21/316 ,  H01L21/324 ,  H01L21/762

CPC classification number: H01L21/3247 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/31662 ,  H01L21/7624

Abstract: A process for avoiding formation of an Si—SiO2—H2 environment during a dissolution treatment of a semiconductor-on-insulator structure that includes a carrier substrate, an oxide layer, a thin layer of a semiconductor material and a peripheral ring in which the oxide layer is exposed. This process includes encapsulating at least the exposed oxide layer of the peripheral ring with semiconductor material by performing a creep thermal treatment; and performing an oxide dissolution treatment to reduce part of the thickness of the oxide layer. In this process, the semiconductor material that encapsulates the oxide layer has a thickness before the oxide dissolution that is at least twice that of the oxide that is to be dissolved, thus avoiding formation of an Si—SiO2—H2 environment on the peripheral ring where the oxide layer would otherwise be exposed.

Abstract translation: 在绝缘体上半导体结构的溶解处理中避免形成Si-SiO 2 -H 2环境的方法，其包括载体衬底，氧化物层，半导体材料的薄层和外围环，其中氧化物 层暴露。 该方法包括通过进行蠕变热处理将至少外围环的暴露的氧化物层与半导体材料封装起来; 并进行氧化物溶解处理以减少氧化物层的厚度的一部分。 在该方法中，封装氧化物层的半导体材料的氧化物溶解前的厚度为要溶解的氧化物的至少两倍，因此避免在外围环上形成Si-SiO 2 -H 2环境， 否则会暴露氧化层。