公开(公告)号：US20180026062A1

公开(公告)日：2018-01-25

申请号：US15720238

申请日：2017-09-29

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

公开(公告)号：US09490373B2

公开(公告)日：2016-11-08

申请号：US13749393

申请日：2013-01-24

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Itaru Oshiyama ,  Yuki Miyanami ,  Takeshi Takeda

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L27/146 ,  H04N5/359 ,  H04N5/3745

CPC classification number: H01L31/0216 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/0224 ,  H04N5/3591 ,  H04N5/37452

Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

Abstract translation: 提供了一种固态成像装置，其包括其中多个单位像素布置在半导体衬底上的像素阵列部分，所述多个单位像素包括基于接收光量产生并积累光电荷的光电转换部分， 累积光电荷的电荷累积部分，其中更靠近光入射到电荷累积部分的单位像素的入射侧的电极的至少一部分形成有用作遮光膜的金属膜。

公开(公告)号：US20130200479A1

公开(公告)日：2013-08-08

申请号：US13749393

申请日：2013-01-24

Applicant: SONY CORPORATION

Inventor： Yorito Sakano ,  Itaru Oshiyama ,  Yuki Miyanami ,  Takeshi Takeda

IPC: H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/0216 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/0224 ,  H04N5/3591 ,  H04N5/37452

Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

Abstract translation: 提供了一种固态成像装置，其包括其中多个单位像素布置在半导体衬底上的像素阵列部分，所述多个单位像素包括基于接收光量产生并积累光电荷的光电转换部分， 累积光电荷的电荷累积部分，其中更靠近光入射到电荷累积部分的单位像素的入射侧的电极的至少一部分形成有用作遮光膜的金属膜。

公开(公告)号：US20180366500A1

公开(公告)日：2018-12-20

申请号：US16113015

申请日：2018-08-27

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H01L27/146

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

公开(公告)号：US09818787B2

公开(公告)日：2017-11-14

申请号：US14985105

申请日：2015-12-30

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

公开(公告)号：US09312301B2

公开(公告)日：2016-04-12

申请号：US14070261

申请日：2013-11-01

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

Abstract translation: 一种固态图像传感器，包括其中设置有光电转换元件的基板，所述光电转换元件将入射光量转换为电荷量，存储单元设置在所述光电转换元件的一侧，所述存储单元接收 来自光电转换元件的电荷量，形成在存储单元的第一侧并设置在电荷累积区域和光电转换元件之间的第一遮光部分，以及形成在第二侧面的第二遮光部分 存储单元，使得第二侧与第一侧相对。

公开(公告)号：US09282262B2

公开(公告)日：2016-03-08

申请号：US14492643

申请日：2014-09-22

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H04N5/355 ,  H04N5/369 ,  H04N5/378

CPC classification number: H04N5/378 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/3698 ,  H04N5/3745 ,  H04N5/37452

Abstract: A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

Abstract translation: 固态成像装置包括二维阵列中的多个像素。 每个像素包括将入射光转换成电荷的光电转换元件和从光电转换元件接收电荷并将电荷转移到相应的浮动扩散的电荷保持元件。 电荷保持元件还包括多个电极。

公开(公告)号：US20160118422A1

公开(公告)日：2016-04-28

申请号：US14985105

申请日：2015-12-30

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

Abstract translation: 一种固态图像传感器，包括其中设置有光电转换元件的基板，所述光电转换元件将入射光量转换为电荷量，存储单元设置在所述光电转换元件的一侧，所述存储单元接收 来自光电转换元件的电荷量，形成在存储单元的第一侧并设置在电荷累积区域和光电转换元件之间的第一遮光部分，以及形成在第二侧面的第二遮光部分 存储单元，使得第二侧与第一侧相对。

公开(公告)号：US20160080676A1

公开(公告)日：2016-03-17

申请号：US14950715

申请日：2015-11-24

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H04N5/378

CPC classification number: H04N5/378 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/3698 ,  H04N5/3745 ,  H04N5/37452

Abstract: A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

公开(公告)号：US10079260B2

公开(公告)日：2018-09-18

申请号：US15720238

申请日：2017-09-29

Applicant: Sony Corporation

Inventor： Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.