公开(公告)号：US10734386B2

公开(公告)日：2020-08-04

申请号：US16086999

申请日：2017-03-06

Applicant: SONY CORPORATION

Inventor： Takuya Ito ,  Koichiro Saga

IPC: G11C11/00 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12 ,  H01L29/82 ,  H01L43/10

Abstract: To further improve reliability as an element for the memory element. Provided is a memory element including: a plurality of magnetoresistive elements having an MTJ structure that are arrayed on a substrate. There is a region in which magnetism is neutralized in a region of a magnetic material layer that functions as a storage layer in the magnetoresistive element other than a region that functions as the magnetoresistive element, and the region in which magnetism is neutralized includes an alloy containing a first element constituting the magnetic material layer and a second element having an fcc structure when forming an alloy with the first element.

公开(公告)号：US09680104B2

公开(公告)日：2017-06-13

申请号：US14439416

申请日：2013-10-31

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Masaki Murata ,  Osamu Enoki ,  Masayoshi Aonuma ,  Sae Miyaji ,  Takuya Ito ,  Miki Sudou ,  Rui Morimoto ,  Hiroto Sasaki

IPC: H01L29/08 ,  H01L51/00 ,  H01L27/30 ,  H01L51/42

CPC classification number: H01L51/0046 ,  H01L27/307 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/4246 ,  H01L51/4253 ,  Y02E10/549

Abstract: A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.