公开(公告)号：US11158675B2

公开(公告)日：2021-10-26

申请号：US16316999

申请日：2017-07-20

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yohei Hirose ,  Iwao Yagi ,  Shintarou Hirata ,  Hideaki Mogi ,  Masashi Bando ,  Osamu Enoki

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H04N5/369

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an—upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

公开(公告)号：US20200251672A1

公开(公告)日：2020-08-06

申请号：US16857974

申请日：2020-04-24

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Masaki Murata ,  Rui Morimoto ,  Osamu Enoki

IPC: H01L51/42 ,  H01L27/30

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

公开(公告)号：US10199587B2

公开(公告)日：2019-02-05

申请号：US14419148

申请日：2013-06-21

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Masaki Murata ,  Rui Morimoto ,  Osamu Enoki

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/42 ,  H01L27/30

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

公开(公告)号：US10032834B2

公开(公告)日：2018-07-24

申请号：US14418503

申请日：2013-06-21

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Masaki Murata ,  Rui Morimoto ,  Osamu Enoki

IPC: H01L27/14 ,  H01L31/0232 ,  H01L31/101 ,  H01L27/32 ,  H01L27/28 ,  H01L27/30 ,  H01L51/44

Abstract: Provided is a light receiving/emitting element and a light receiving/emitting apparatus that can be easily manufactured and allow high-sensitivity detection.The light receiving/emitting element is configured to include a first organic photoelectric conversion unit and a second organic photoelectric conversion unit that is disposed on the first organic photoelectric conversion unit and is different in spectral sensitivity from the first organic photoelectric conversion unit, wherein one of the first organic photoelectric conversion unit and the second organic photoelectric conversion unit acts as a light receiving unit and the other acts as a light emitting unit. The light receiving/emitting apparatus is configured to have the light receiving/emitting element mounted thereon.

公开(公告)号：US10020347B2

公开(公告)日：2018-07-10

申请号：US14087430

申请日：2013-11-22

Applicant: Sony Corporation

Inventor： Osamu Enoki ,  Toru Udaka ,  Masaki Murata ,  Rui Morimoto

IPC: H04N5/369 ,  H01L27/30 ,  H01L51/44 ,  H04N5/225 ,  H01L51/00

CPC classification number: H01L27/307 ,  H01L51/003 ,  H01L51/448 ,  H04N5/2253 ,  H04N5/369 ,  Y02E10/549 ,  Y02P70/521

Abstract: Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

公开(公告)号：US20150287765A1

公开(公告)日：2015-10-08

申请号：US14437270

申请日：2013-09-25

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Osamu Enoki ,  Masaki Murata ,  Rui Morimoto ,  Ryoji Arai

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/0072 ,  H01L51/4273 ,  H01L51/441 ,  H01L51/442 ,  H01L2251/301 ,  H01L2251/305 ,  H01L2251/306 ,  H01L2251/308 ,  Y02E10/549

Abstract: A photoelectric conversion device includes an organic photoelectric conversion film; a first electrode and a second electrode provided with the organic photoelectric conversion film in between; and a charge block layer provided between the second electrode and the organic photoelectric conversion film, in which the charge block layer includes a work function adjustment layer including a metal element on the second electrode side of the organic photoelectric conversion film, the metal element being adopted to adjust a work function, and a first diffusion suppression layer provided between the work function adjustment layer and the second electrode and suppressing diffusion of the metal element to the second electrode side.

Abstract translation: 光电转换装置包括有机光电转换膜; 在其间设置有有机光电转换膜的第一电极和第二电极; 以及设置在第二电极和有机光电转换膜之间的电荷阻挡层，其中电荷阻挡层包括在有机光电转换膜的第二电极侧上包括金属元素的功函数调节层，采用金属元素 调整功函数，以及第一扩散抑制层，设置在功函调整层与第二电极之间，抑制金属元件向第二电极侧的扩散。

公开(公告)号：US20140160327A1

公开(公告)日：2014-06-12

申请号：US14087430

申请日：2013-11-22

Applicant: Sony Corporation

Inventor： Osamu Enoki ,  Toru Udaka ,  Masaki Murata ,  Rui Morimoto

IPC: H01L27/30 ,  H04N5/369 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/003 ,  H01L51/448 ,  H04N5/2253 ,  H04N5/369 ,  Y02E10/549 ,  Y02P70/521

Abstract: Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Abstract translation: 提供图像传感器，电子设备和图像传感器的制造方法。 更具体地说，提供一种具有包括在层叠体中的多个光电转换元件的图像传感器。 至少一个光电转换元件包括有机光电转换元件。 此外，层压体的至少第一表面包括还包括凹面的弯曲光入射表面。 多个光电转换元件通过凹入光入射面接收光。 层压体可以连接到支撑结构。

公开(公告)号：US11335861B2

公开(公告)日：2022-05-17

申请号：US16612139

申请日：2018-05-07

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yosuke Saito ,  Ichiro Takemura ,  Osamu Enoki ,  Yuki Negishi ,  Yuta Hasegawa ,  Hideaki Mogi ,  Yasuharu Ujiie

IPC: H01L51/00 ,  C07D495/04 ,  H01L27/30 ,  H01L51/42

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

公开(公告)号：US11183654B2

公开(公告)日：2021-11-23

申请号：US16857974

申请日：2020-04-24

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Masaki Murata ,  Rui Morimoto ,  Osamu Enoki

IPC: H01L51/42 ,  H01L27/30 ,  H01L51/00

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

公开(公告)号：US09680104B2

公开(公告)日：2017-06-13

申请号：US14439416

申请日：2013-10-31

Applicant: SONY CORPORATION

Inventor： Toru Udaka ,  Masaki Murata ,  Osamu Enoki ,  Masayoshi Aonuma ,  Sae Miyaji ,  Takuya Ito ,  Miki Sudou ,  Rui Morimoto ,  Hiroto Sasaki

IPC: H01L29/08 ,  H01L51/00 ,  H01L27/30 ,  H01L51/42

CPC classification number: H01L51/0046 ,  H01L27/307 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/4246 ,  H01L51/4253 ,  Y02E10/549

Abstract: A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.