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公开(公告)号:US10404065B2
公开(公告)日:2019-09-03
申请号:US15552189
申请日:2016-12-16
Applicant: SOUTHEAST UNIVERSITY
Abstract: A distributed predictive control based voltage restoration scheme for microgrids, comprising: step 10) adopting a distributed finite time observer to acquire the global reference voltage for restoring the voltage of each local controller; step 20) each local controller adopts a droop control to acquire the local voltage value of each generation, and adds a secondary voltage compensation term into the droop characteristic formula to form the voltage reference value of a distributed generation; step 30) establishing a trended prediction model; step 40) acquiring a predictive control term at a current time as the secondary voltage compensation command, and acting on the local controllers; and step 50) determining, whether the local voltage of each distributed generation of the microgrid reaches the voltage reference value under the secondary voltage compensation command.
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公开(公告)号:US09755696B2
公开(公告)日:2017-09-05
申请号:US15310389
申请日:2014-07-15
Applicant: SOUTHEAST UNIVERSITY
Inventor: Jianfeng Zhao , Zhendong Ji , Wei Liu , Yichao Sun
CPC classification number: H04B3/54 , H04L25/4902 , H04L27/12
Abstract: A method of data transmission between power electronic devices without a communication line involves generation of a digital signal in a data transmission process. The digital signal enables PWM modulation of specific data information via a composite modulation method. The composite modulation superimposes PWM modulation waves after modulating the PWM carrier frequency or conducting high-frequency modulation on the data. The composite modulation generates a PWM drive pulse signal which is transmitted to a power circuit via a main power electronic circuit to complete the data transmission process. In the data receiving process, signals are extracted on the voltage and current of a power line via software or hardware, and data demodulated to obtain the data information to complete the data receiving process.
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公开(公告)号:US20170149473A1
公开(公告)日:2017-05-25
申请号:US15310389
申请日:2014-07-15
Applicant: SOUTHEAST UNIVERSITY
Inventor: Jianfeng Zhao , Zhendong Ji , Wei Liu , Yichao Sun
CPC classification number: H04B3/54 , H04L25/4902 , H04L27/12
Abstract: A method of data transmission between power electronic devices without a communication line involves generation of a digital signal in a data transmission process. The digital signal enables PWM modulation of specific data information via a composite modulation method. The composite modulation superimposes PWM modulation waves after modulating the PWM carrier frequency or conducting high-frequency modulation on the data. The composite modulation generates a PWM drive pulse signal which is transmitted to a power circuit via a main power electronic circuit to complete the data transmission process. In the data receiving process, signals are extracted on the voltage and current of a power line via software or hardware, and data demodulated to obtain the data information to complete the data receiving process.
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公开(公告)号:US11575066B2
公开(公告)日:2023-02-07
申请号:US17606221
申请日:2019-05-29
Applicant: SOUTHEAST UNIVERSITY
Inventor: Chunxiang Xu , Wei Liu , Zengliang Shi , Zhuxin Li
Abstract: The present invention discloses a bidirectional ultraviolet light emitting diode (UV LED) based on N—ZnO/N—GaN/N—ZnO heterojunction as well as its preparation method. The LED includes: N—ZnO microwires, a N—GaN film, a PMMA protective layer and alloy electrodes; and its preparation method includes the following steps: lay two N—ZnO microwires on the N—GaN film, then spin-coat a PMMA protective layer on the film to fix the N—ZnO microwires until the PMMA protective layer spreads over the N—ZnO microwires, and then place the film on a drying table to solidify the PMMA protective layer; then etch the PMMA protective layer with O2 to expose the N—ZnO microwires, and prepare alloy electrodes on different N—ZnO microwires to construct a N—ZnO/N—GaN/N—ZnO heterojunction to constitute a complete device. The present invention constructs an N/N/N symmetrical structure; the device is composed of N—ZnO and N—GaN, emits light in the ultraviolet region and has a small turn-on voltage.
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公开(公告)号:US20220158024A1
公开(公告)日:2022-05-19
申请号:US17606221
申请日:2019-05-29
Applicant: SOUTHEAST UNIVERSITY
Inventor: Chunxiang XU , Wei Liu , Zengliang Shi , Zhuxin Li
Abstract: The present invention discloses a bidirectional ultraviolet light emitting diode (UV LED) based on N—ZnO/N—GaN/N—ZnO heterojunction as well as its preparation method. The LED includes: N—ZnO microwires, a N—GaN film, a PMMA protective layer and alloy electrodes; and its preparation method includes the following steps: lay two N—ZnO microwires on the N—GaN film, then spin-coat a PMMA protective layer on the film to fix the N—ZnO microwires until the PMMA protective layer spreads over the N—ZnO microwires, and then place the film on a drying table to solidify the PMMA protective layer; then etch the PMMA protective layer with O2 to expose the N—ZnO microwires, and prepare alloy electrodes on different N—ZnO microwires to construct a N—ZnO/N—GaN/N—ZnO heterojunction to constitute a complete device. The present invention constructs an N/N/N symmetrical structure; the device is composed of N—ZnO and N—GaN, emits light in the ultraviolet region and has a small turn-on voltage.
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