公开(公告)号：US20200212198A1

公开(公告)日：2020-07-02

申请号：US16746853

申请日：2020-01-18

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/66 ,  H01L29/06 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/78 ,  H01L29/16 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/04 ,  H01L29/778 ,  H01L29/20

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

公开(公告)号：US20200185219A1

公开(公告)日：2020-06-11

申请号：US16349918

申请日：2017-11-29

Applicant: STC.UNM

Inventor： Tito Busani ,  Steven R.J. Brueck ,  Daniel Feezell ,  Mahmoud Behzadirad

IPC: H01L21/02 ,  G01Q60/38 ,  G01Q70/12

Abstract: Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

公开(公告)号：US09142400B1

公开(公告)日：2015-09-22

申请号：US13944808

申请日：2013-07-17

Applicant: STC.UNM

Inventor： Steven R. J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/06 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L21/02107 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02639 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66469 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7783 ,  H01L29/785

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract translation: 一种制造异质外延层的方法。 该方法包括提供半导体衬底。 在半导体衬底上形成用选择性生长掩模描绘的种子区域。 种子区域包括第一材料并且具有小于100nm的线性表面尺寸。 在种子区域上生长异质外延层，异质外延层包含不同于第一材料的第二材料。 还公开了通过该方法制造的器件。

公开(公告)号：US11177126B2

公开(公告)日：2021-11-16

申请号：US16684313

申请日：2019-11-14

Applicant: STC.UNM

Inventor： Morteza Monavarian ,  Daniel Feezell ,  Andrew Aragon ,  Saadat Mishkat-Ul-Masabih ,  Andrew Allerman ,  Andrew Armstrong ,  Mary Crawford

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/306

Abstract: A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

公开(公告)号：US20200161449A1

公开(公告)日：2020-05-21

申请号：US16748361

申请日：2020-01-21

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  B82Y40/00 ,  H01L29/04 ,  H01L29/06 ,  H01L29/775 ,  H01L29/20 ,  H01L29/778 ,  B82Y10/00 ,  H01L29/16

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

公开(公告)号：US20200161448A1

公开(公告)日：2020-05-21

申请号：US16748327

申请日：2020-01-21

Applicant: STC.UNM

Inventor： Steven R.J. Brueck ,  Stephen D. Hersee ,  Seung-Chang Lee ,  Daniel Feezell

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  B82Y40/00 ,  H01L29/04 ,  H01L29/06 ,  H01L29/775 ,  H01L29/20 ,  H01L29/778 ,  B82Y10/00 ,  H01L29/16

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.