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公开(公告)号：US20150116874A1
公开(公告)日：2015-04-30
申请号：US14521624
申请日：2014-10-23
Applicant: STMICROELECTRONICS (TOURS) SAS
Inventor： Greca Jean Charles , Bertrand Rivet
CPC classification number: H02H9/04 , H01L27/0248
Abstract: An overvoltage protection device uses a varistor coupled in series with a switch between two terminals provided for connection to a circuit device or element to be protected. A control circuit controls actuation of the switch in response to sensing voltage at or between the two terminals in excess of a first threshold. The first threshold is less than a clipping voltage of the varistor but in excess of a supply voltage for the circuit device or element. The control circuit further controls detactuation of the switch based, for example, on elapsed time from actuation or current flow.
Abstract translation: 过压保护装置使用与两个端子之间的开关串联耦合的压敏电阻器，用于连接到要保护的电路装置或元件。 控制电路响应于在两个端子之间或之间的感测电压超过第一阈值来控制开关的致动。 第一阈值小于压敏电阻的限幅电压，但超过电路装置或元件的电源电压。 控制电路还基于例如从致动或电流流动的经过时间来控制开关的去动。
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公开(公告)号：US10784787B2
公开(公告)日：2020-09-22
申请号：US14525460
申请日：2014-10-28
Applicant: STMicroelectronics (Tours) SAS
Inventor： Bertrand Rivet , Greca Jean Charles , Frederic Lanois
Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.
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公开(公告)号：US20150117063A1
公开(公告)日：2015-04-30
申请号：US14525460
申请日：2014-10-28
Applicant: STMICROELECTRONICS (TOURS) SAS
Inventor： Bertrand Rivet , Greca Jean Charles , Frederic Lanois
Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.
Abstract translation: 电路包括第一场效应晶体管和第二场效应晶体管。 第一场效应晶体管包括具有漏极，源极，栅极和第一附加电极的第一二极管。 第二场效应晶体管包括具有漏极，源极，栅极和第二附加电极的第二二极管。 第一开关选择性地连接第一场效应晶体管的栅电极和漏电极。 第二开关选择性地连接第二场效应晶体管的栅电极和漏电极。 控制电路控制第一和第二开关。 第一附加电极耦合到第二场效应晶体管的栅电极，第二附加电极耦合到第一场效应晶体管的栅电极。
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