公开(公告)号：US09541936B2

公开(公告)日：2017-01-10

申请号：US14548386

申请日：2014-11-20

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand Rivet ,  David Jouve

IPC: G05F1/10 ,  G05F1/613 ,  G05F1/46 ,  H03K17/10

CPC classification number: G05F1/613 ,  G05F1/468 ,  H03K17/102

Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较， 配置为由比较器控制。

公开(公告)号：US10133290B2

公开(公告)日：2018-11-20

申请号：US15363648

申请日：2016-11-29

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand Rivet ,  David Jouve

IPC: G05F1/10 ,  G05F1/613 ,  G05F1/46 ,  H03K17/10

Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

公开(公告)号：US10045420B2

公开(公告)日：2018-08-07

申请号：US14838519

申请日：2015-08-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand Rivet ,  David Jouve

IPC: H05B37/02 ,  H05B33/08 ,  G05F1/577 ,  H03K17/12 ,  H03K17/74 ,  H03K17/14

Abstract: A circuit is for balancing currents flowing through a parallel assembly of semiconductor components of the same type. The circuit may include a respective regulation circuit for each semiconductor component. Each regulation circuit may include a comparator of a first signal representative of the current flowing through the component with a reference signal, and a resistive element of a changeable resistance and controlled by the comparator.

公开(公告)号：US20150116874A1

公开(公告)日：2015-04-30

申请号：US14521624

申请日：2014-10-23

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Greca Jean Charles ,  Bertrand Rivet

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/04 ,  H01L27/0248

Abstract: An overvoltage protection device uses a varistor coupled in series with a switch between two terminals provided for connection to a circuit device or element to be protected. A control circuit controls actuation of the switch in response to sensing voltage at or between the two terminals in excess of a first threshold. The first threshold is less than a clipping voltage of the varistor but in excess of a supply voltage for the circuit device or element. The control circuit further controls detactuation of the switch based, for example, on elapsed time from actuation or current flow.

Abstract translation: 过压保护装置使用与两个端子之间的开关串联耦合的压敏电阻器，用于连接到要保护的电路装置或元件。 控制电路响应于在两个端子之间或之间的感测电压超过第一阈值来控制开关的致动。 第一阈值小于压敏电阻的限幅电压，但超过电路装置或元件的电源电压。 控制电路还基于例如从致动或电流流动的经过时间来控制开关的去动。

公开(公告)号：US10784787B2

公开(公告)日：2020-09-22

申请号：US14525460

申请日：2014-10-28

Applicant: STMicroelectronics (Tours) SAS

Inventor： Bertrand Rivet ,  Greca Jean Charles ,  Frederic Lanois

IPC: H02M3/335 ,  H03K17/16 ,  H03K17/687 ,  H03K17/74 ,  H02M1/08 ,  H03K3/012

Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.

公开(公告)号：US20150117063A1

公开(公告)日：2015-04-30

申请号：US14525460

申请日：2014-10-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand Rivet ,  Greca Jean Charles ,  Frederic Lanois

IPC: H02M3/335 ,  H03K3/012 ,  H02M1/08

Abstract: A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.

Abstract translation: 电路包括第一场效应晶体管和第二场效应晶体管。 第一场效应晶体管包括具有漏极，源极，栅极和第一附加电极的第一二极管。 第二场效应晶体管包括具有漏极，源极，栅极和第二附加电极的第二二极管。 第一开关选择性地连接第一场效应晶体管的栅电极和漏电极。 第二开关选择性地连接第二场效应晶体管的栅电极和漏电极。 控制电路控制第一和第二开关。 第一附加电极耦合到第二场效应晶体管的栅电极，第二附加电极耦合到第一场效应晶体管的栅电极。